JAJST19 February   2024 DRV8262-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
      1. 5.4.1 Transient Thermal Impedance & Current Capability
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1  Overview
    2. 6.2  Functional Block Diagram
    3. 6.3  Feature Description
    4. 6.4  Device Operational Modes
      1. 6.4.1 Dual H-Bridge Mode (MODE1 = 0)
      2. 6.4.2 Single H-Bridge Mode (MODE1 = 1)
    5. 6.5  Current Sensing and Regulation
      1. 6.5.1 Current Sensing and Feedback
      2. 6.5.2 Current Regulation
        1. 6.5.2.1 Mixed Decay
        2. 6.5.2.2 Smart tune Dynamic Decay
      3. 6.5.3 Current Sensing with External Resistor
    6. 6.6  Charge Pump
    7. 6.7  Linear Voltage Regulator
    8. 6.8  VCC Voltage Supply
    9. 6.9  Logic Level, Tri-Level and Quad-Level Pin Diagrams
    10. 6.10 Protection Circuits
      1. 6.10.1 VM Undervoltage Lockout (UVLO)
      2. 6.10.2 VCP Undervoltage Lockout (CPUV)
      3. 6.10.3 Logic Supply Power on Reset (POR)
      4. 6.10.4 Overcurrent Protection (OCP)
      5. 6.10.5 Thermal Shutdown (OTSD)
      6. 6.10.6 nFAULT Output
      7. 6.10.7 Fault Condition Summary
    11. 6.11 Device Functional Modes
      1. 6.11.1 Sleep Mode
      2. 6.11.2 Operating Mode
      3. 6.11.3 nSLEEP Reset Pulse
      4. 6.11.4 Functional Modes Summary
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Driving Brushed-DC Motors
        1. 7.1.1.1 Brushed-DC Motor Driver Typical Application
        2. 7.1.1.2 Power Loss Calculations - Dual H-bridge
        3. 7.1.1.3 Power Loss Calculations - Single H-bridge
        4. 7.1.1.4 Junction Temperature Estimation
        5. 7.1.1.5 Application Performance Plots
      2. 7.1.2 Driving Stepper Motors
        1. 7.1.2.1 Stepper Driver Typical Application
        2. 7.1.2.2 Power Loss Calculations
        3. 7.1.2.3 Junction Temperature Estimation
      3. 7.1.3 Driving Thermoelectric Coolers (TEC)
  9. 8 Package Thermal Considerations
    1. 8.1 DDW Package
      1. 8.1.1 Thermal Performance
        1. 8.1.1.1 Steady-State Thermal Performance
        2. 8.1.1.2 Transient Thermal Performance
    2. 8.2 PCB Material Recommendation
  10. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
    2. 9.2 Power Supplies
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 サポート・リソース
    4. 11.4 Trademarks
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 用語集
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Tape and Reel Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.1.1.4 Junction Temperature Estimation

For an ambient temperature of TA and total power dissipation (PTOT), the junction temperature (TJ) is calculated as -

TJ = TA + (PTOT x RθJA)

Considering a JEDEC standard 4-layer PCB, the junction-to-ambient thermal resistance (RθJA) is 22.2 °C/W .

Assuming 25°C ambient temperature, the junction temperature is calculated as shown below -

Equation 4. TJ = 25°C + (3.84 W x 22.2 °C/W) = 110.2 °C

For more accurate calculation, consider the dependency of on-resistance of FETs with device junction temperature shown in the Typical Operating Characteristics section.

For example,

  • At 110.2 °C junction temperature, the on-resistance will likely increase by a factor of 1.4 compared to the on-resistance at 25 °C.

  • The initial estimate of conduction loss was 3.2 W.

  • New estimate of conduction loss will therefore be 3.2 W x 1.4 = 4.48 W.

  • New estimate of the total power loss will accordingly be 5.12 W.

  • New estimate of junction temperature for the DDW package will be 138.7 °C.

  • Further iterations are unlikely to increase the junction temperature estimate by significant amount.