JAJSQ43 データシート

JAJSQ43A april 2023 – june 2023 ESD451

PRODUCTION DATA

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

6.6 Electrical Characteristics

At TA=25℃ (unless otherwise noted) ⁽¹⁾

PARAMETER		TEST CONDITION	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	I_IO<100 nA, across operating temperature range	-5.5		5.5	V
I_LEAK	Reverse leakage current	V_IO= 5.5 V, IO to GND or GND to IO		5	50	nA
V_BRR	Break-down voltage	I_IO = 1 mA, IO to GND	7	8	9	V
V_BRF	Break-down voltage	I_IO = 1 mA, GND to IO	7	8	9	V
V_HOLD	Holding voltage ⁽²⁾	TLP, IO to GND or GND to IO		7.2		V
V_CLAMP	Clamping voltage with TLP	I_PP = 1 A, TLP, IO to GND		7.6		V
		I_PP = 5 A, TLP, IO to GND		8.2		V
		I_PP = 16 A, TLP, IO to GND		10.4		V
		I_PP =1 A, TLP, GND to IO		7.6		V
		I_PP =5 A, TLP, GND to IO		8.2		V
		I_PP =16 A, TLP, GND to IO		10.4		V
	Clamping voltage with surge strike ⁽⁴⁾	I_PP= 6 A, t_p = 8/20 µs , IO to GND		9.5		V
	Clamping voltage with surge strike ⁽⁴⁾	I_PP= 6 A, t_p = 8/20 µs , GND to IO		9.5		V
R_DYN	Dynamic resistance ⁽³⁾	IO to GND		0.19		Ω
R_DYN	Dynamic resistance ⁽³⁾	GND to IO		0.19		Ω
C_L	Line capacitance	V_IO= 0 V; ƒ = 1 MHz, V_pp = 30 mV, IO to GND or IO to GND		0.5		pF

(1) Typical parameters are measured at 25℃

(2) Transition line pulse with 100 ns width and 10 ns rise and fall time

(3) Extraction of R_DYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A

(4) Nonrepetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5