JAJSJI6B December   2020  – January 2023 LM25149-Q1

PRODUCTION DATA  

  1. 特長
  2. アプリケーション
  3. 概要
  4. Revision History
  5. 概要 (続き)
  6. Pin Configuration and Functions
    1. 6.1 Wettable Flanks
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings 
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Active EMI Filter
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Voltage Range (VIN)
      2. 8.3.2  High-Voltage Bias Supply Regulator (VCC, VCCX, VDDA)
      3. 8.3.3  Precision Enable (EN)
      4. 8.3.4  Power-Good Monitor (PG)
      5. 8.3.5  Switching Frequency (RT)
      6. 8.3.6  Active EMI Filter
      7. 8.3.7  Dual Random Spread Spectrum (DRSS)
      8. 8.3.8  Soft Start
      9. 8.3.9  Output Voltage Setpoint (FB)
      10. 8.3.10 Minimum Controllable On Time
      11. 8.3.11 Error Amplifier and PWM Comparator (FB, EXTCOMP)
      12. 8.3.12 Slope Compensation
      13. 8.3.13 Inductor Current Sense (ISNS+, VOUT)
        1. 8.3.13.1 Shunt Current Sensing
        2. 8.3.13.2 Inductor DCR Current Sensing
      14. 8.3.14 Hiccup Mode Current Limiting
      15. 8.3.15 High-Side and Low-Side Gate Drivers (HO, LO)
      16. 8.3.16 Output Configurations (CNFG)
      17. 8.3.17 Single-Output Dual-Phase Operation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Sleep Mode
      2. 8.4.2 Pulse Frequency Modulation and Synchronization (PFM/SYNC)
      3. 8.4.3 Thermal Shutdown
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Power Train Components
        1. 9.1.1.1 Buck Inductor
        2. 9.1.1.2 Output Capacitors
        3. 9.1.1.3 Input Capacitors
        4. 9.1.1.4 Power MOSFETs
        5. 9.1.1.5 EMI Filter
        6. 9.1.1.6 Active EMI Filter
      2. 9.1.2 Error Amplifier and Compensation
    2. 9.2 Typical Applications
      1. 9.2.1 Design 1 – High-Efficiency 2.1-MHz Synchronous Buck Regulator
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1  Custom Design With WEBENCH® Tools
          2. 9.2.1.2.2  Custom Design With Excel Quickstart Tool
          3. 9.2.1.2.3  Buck Inductor
          4. 9.2.1.2.4  Current-Sense Resistance
          5. 9.2.1.2.5  Output Capacitors
          6. 9.2.1.2.6  Input Capacitors
          7. 9.2.1.2.7  Frequency Set Resistor
          8. 9.2.1.2.8  Feedback Resistors
          9. 9.2.1.2.9  Compensation Components
          10. 9.2.1.2.10 Active EMI Components
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Design 2 – High Efficiency 440-kHz Synchronous Buck Regulator
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Design 3 – Dual-Phase 400-kHz 20-A Synchronous Buck Regulator
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 Power Stage Layout
        2. 9.4.1.2 Gate-Drive Layout
        3. 9.4.1.3 PWM Controller Layout
        4. 9.4.1.4 Active EMI Layout
        5. 9.4.1.5 Thermal Design and Layout
        6. 9.4.1.6 Ground Plane Design
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
        1. 10.1.1.1 Custom Design With WEBENCH® Tools
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
        1. 10.2.1.1 PCB Layout Resources
        2. 10.2.1.2 Thermal Design Resources
    3. 10.3 ドキュメントの更新通知を受け取る方法
    4. 10.4 サポート・リソース
    5. 10.5 Trademarks
    6. 10.6 静電気放電に関する注意事項
    7. 10.7 用語集
  11. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Layout Example

Figure 9-37 shows a single-sided layout of a synchronous buck regulator with discrete power MOSFETs, Q1 and Q2, in SON 5-mm × 6-mm case size. The power stage is surrounded by a GND pad geometry to connect an EMI shield if needed. The design uses layer 2 of the PCB as a power-loop return path directly underneath the top layer to create a low-area switching power loop of approximately 2 mm². This loop area, and hence parasitic inductance, must be as small as possible to minimize EMI as well as switch-node voltage overshoot and ringing.

The high-frequency power loop current flows through MOSFETs Q1 and Q2, through the power ground plane on layer 2, and back to VIN through the 0402 ceramic capacitors C17 through C22. The currents flowing in opposing directions in the vertical loop configuration provide field self-cancellation, reducing parasitic inductance. Figure 9-39 shows a side view to illustrate the concept of creating a low-profile, self-canceling loop in a multilayer PCB structure. The layer-2 GND plane layer, shown in Figure 9-38, provides a tightly-coupled current return path directly under the MOSFETs to the source terminals of Q2.

Six 10-nF input capacitors with small 0402 or 0603 case size are placed in parallel very close to the drain of Q1. The low equivalent series inductance (ESL) and high self-resonant frequency (SRF) of the small footprint capacitors yield excellent high-frequency performance. The negative terminals of these capacitors are connected to the layer-2 GND plane with multiple 12-mil (0.3-mm) diameter vias, further minimizing parasitic loop inductance.

GUID-2B64282A-887E-46CE-8530-04582F340937-low.svg Figure 9-37 PCB Top Layer – High Density, Single-sided Design

Additional guidelines to improve noise immunity and reduce EMI are as follows:

  • Make the ground connections to the LM25149-Q1 controller as shown in Figure 9-37. Create a power ground directly connected to all high-power components and an analog ground plane for sensitive analog components. The analog ground plane for AGND and power ground plane for PGND must be connected at a single point directly under the IC – at the die attach pad (DAP).
  • Connect the MOSFETs (switch node) directly to the inductor terminal with short copper connections (without vias) as this net has high dv/dt and contributes to radiated EMI. The single-layer routing of the switch-node connection means that switch-node vias with high dv/dt do not appear on the bottom side of the PCB. This avoids e-field coupling to the reference ground plane during the EMI test. VIN and PGND plane copper pours shield the polygon connecting the MOSFETs to the inductor terminal, further reducing the radiated EMI signature.
  • Place the EMI filter components on the bottom side of the PCB so that they are shielded from the power stage components on the top side.
GUID-4B4B08C2-4161-423D-83B4-8E21B73243AC-low.svg Figure 9-38 Layer 2 Full Ground Plane Directly Under the Power Components
GUID-EDF27F58-06DC-4C63-BC85-612F82910AF4-low.svg Figure 9-39 PCB Stack-up Diagram With Low L1-L2 Intra-layer Spacing (1)