SNVSAG6A November   2015  – December 2015 LM5109B-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
    1. 4.1 Absolute Maximum Ratings
    2. 4.2 ESD Ratings
    3. 4.3 Recommended Operating Conditions
    4. 4.4 Thermal Information
    5. 4.5 Electrical Characteristics
    6. 4.6 Switching Characteristics
    7. 4.7 Typical Characteristics
  5. Detailed Description
    1. 5.1 Overview
    2. 5.2 Functional Block Diagram
    3. 5.3 Feature Description
      1. 5.3.1 Start-up and UVLO
      2. 5.3.2 Level Shift
      3. 5.3.3 Output Stages
    4. 5.4 HS Transient Voltages Below Ground
    5. 5.5 Device Functional Modes
  6. Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Typical Application
      1. 6.2.1 Design Requirements
      2. 6.2.2 Detailed Design Procedure
        1. 6.2.2.1 Select Bootstrap and VDD Capacitor
        2. 6.2.2.2 Select External Bootstrap Diode and Its Series Resistor
        3. 6.2.2.3 Selecting External Gate Driver Resistor
        4. 6.2.2.4 Estimate the Driver Power Loss
      3. 6.2.3 Application Curves
  7. Power Supply Recommendations
  8. Layout
    1. 8.1 Layout Guidelines
    2. 8.2 Layout Example
  9. Device and Documentation Support
    1. 9.1 Community Resources
    2. 9.2 Trademarks
    3. 9.3 Electrostatic Discharge Caution
    4. 9.4 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

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発注情報

7 Power Supply Recommendations

The recommended bias supply voltage range for LM5109B-Q1 is from 8 V to 14 V. The lower end of this range is governed by the internal under voltage-lockout (UVLO) protection feature of the VDD supply circuit blocks. The upper-end of this range is driven by the 18-V absolute maximum voltage rating of the VDD. It is recommended to keep a 4-V margin to allow for transient voltage spikes.

The UVLO protection feature also involves a hysteresis function. This means that once the device is operating in normal mode, if the VDD voltage drops, the device continues to operate in normal mode as far as the voltage drop do not exceeds the hysteresis specification, VDDH. If the voltage drop is more than hysteresis specification, the device will shut down. Therefore, while operating at or near the 8-V range, the voltage ripple on the auxiliary power supply output should be smaller than the hysteresis specification of LM5109B-Q1 to avoid triggering device-shutdown.

A local bypass capacitor should be placed between the VDD and GND pins. And this capacitor should be located as close to the device as possible. A low ESR, ceramic surface mount capacitor is recommended. TI recommends using 2 capacitors across VDD and GND: a 100 nF ceramic surface-mount capacitor for high frequency filtering placed very close to VDD and GND pin, and another surface-mount capacitor, 220 nF to 10 µF, for IC bias requirements. In a similar manner, the current pulses delivered by the HO pin are sourced from the HB pin. Therefore, a 22-nF to 220-nF local decoupling capacitor is recommended between the HB and HS pins.