JAJS842D May   1999  – February 2024 LM7171

PRODUCTION DATA  

  1.   1
  2. 1特長
  3. 2アプリケーション
  4. 3概要
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics: ±15V
    6. 5.6 Electrical Characteristics: ±5V
    7. 5.7 Typical Characteristics: LM7171A
    8. 5.8 Typical Characteristics: LM7171B
  7. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Circuit Operation
      2. 6.1.2 Slew Rate Characteristic
        1. 6.1.2.1 Slew-Rate Limitation
      3. 6.1.3 Compensation for Input Capacitance
    2. 6.2 Typical Applications
    3. 6.3 Power Supply Recommendations
      1. 6.3.1 Power-Supply Bypassing
      2. 6.3.2 Termination
      3. 6.3.3 Driving Capacitive Loads
      4. 6.3.4 Power Dissipation
    4. 6.4 Layout
      1. 6.4.1 Layout Guidelines
        1. 6.4.1.1 Printed Circuit Board and High-Speed Op Amps
        2. 6.4.1.2 Using Probes
        3. 6.4.1.3 Component Selection and Feedback Resistor
  8. 7Device and Documentation Support
    1. 7.1 ドキュメントの更新通知を受け取る方法
    2. 7.2 サポート・リソース
    3. 7.3 Trademarks
    4. 7.4 静電気放電に関する注意事項
    5. 7.5 用語集
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.3.4 Power Dissipation

The maximum power allowed to dissipate in a device is defined as:

Equation 2. PD = (TJ(MAX) − TA) / θJA

where

  • PD is the power dissipation in a device
  • TJ(max) is the maximum junction temperature
  • TA is the ambient temperature
  • RθJA is the thermal resistance of a particular package

For example, for the LM7171 in a SOIC-8 package, the maximum power dissipation at 25°C ambient temperature is 730mW.

Thermal resistance, R θJA, depends on parameters such as die size, package size and package material. The smaller the die size and package, the higher RθJA becomes. The 8-pin DIP package has a lower thermal resistance (108°C/W) than that of 8-pin SOIC (172°C/W). Therefore, for higher dissipation capability, use an 8-pin DIP package.

The total power dissipated in a device can be calculated as:

Equation 3. PD = PQ + PL

where

  • PQ is the quiescent power dissipated in a device with no load connected at the output. PL is the power dissipated in the device with a load connected at the output; PL is not the power dissipated by the load.

    Furthermore,

  • PQ is the supply current × total supply voltage with no load
  • PL is the output current × (voltage difference between supply voltage and output voltage of the same side of supply voltage)

For example, the total power dissipated by the LM7171 with VS = ±15V and output voltage of 10V into 1kΩ is

Equation 4. PD= PQ + PL
Equation 5. = (6.5mA) × (30V) + (10mA) × (15V − 10V)
Equation 6. = 195mW + 50mW
Equation 7. = 245mW