SNOSDI3 March   2024 LMG3425R030

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. Parameter Measurement Information
    1. 6.1 Switching Parameters
      1. 6.1.1 Turn-On Times
      2. 6.1.2 Turn-Off Times
      3. 6.1.3 Drain-Source Turn-On Slew Rate
      4. 6.1.4 Turn-On and Turn-Off Switching Energy
    2. 6.2 Safe Operation Area (SOA)
      1. 6.2.1 Repetitive SOA
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  GaN FET Operation Definitions
      2. 7.3.2  Direct-Drive GaN Architecture
      3. 7.3.3  Drain-Source Voltage Capability
      4. 7.3.4  Internal Buck-Boost DC-DC Converter
      5. 7.3.5  VDD Bias Supply
      6. 7.3.6  Auxiliary LDO
      7. 7.3.7  Fault Protection
        1. 7.3.7.1 Overcurrent Protection and Short-Circuit Protection
        2. 7.3.7.2 Overtemperature Shutdown Protection
        3. 7.3.7.3 UVLO Protection
        4. 7.3.7.4 High-Impedance RDRV Pin Protection
        5. 7.3.7.5 Fault Reporting
      8. 7.3.8  Drive-Strength Adjustment
      9. 7.3.9  Temperature-Sensing Output
      10. 7.3.10 Ideal-Diode Mode Operation
        1. 7.3.10.1 Operational Ideal-Diode Mode
        2. 7.3.10.2 Overtemperature-Shutdown Ideal-Diode Mode
    4. 7.4 Start-Up Sequence
    5. 7.5 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Slew Rate Selection
        2. 8.2.2.2 Signal Level-Shifting
        3. 8.2.2.3 Buck-Boost Converter Design
      3. 8.2.3 Application Curves
    3. 8.3 Do's and Don'ts
    4. 8.4 Power Supply Recommendations
      1. 8.4.1 Using an Isolated Power Supply
      2. 8.4.2 Using a Bootstrap Diode
        1. 8.4.2.1 Diode Selection
        2. 8.4.2.2 Managing the Bootstrap Voltage
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
        1. 8.5.1.1 Solder-Joint Reliability
        2. 8.5.1.2 Power-Loop Inductance
        3. 8.5.1.3 Signal-Ground Connection
        4. 8.5.1.4 Bypass Capacitors
        5. 8.5.1.5 Switch-Node Capacitance
        6. 8.5.1.6 Signal Integrity
        7. 8.5.1.7 High-Voltage Spacing
        8. 8.5.1.8 Thermal Recommendations
      2. 8.5.2 Layout Examples
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Export Control Notice
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

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発注情報

Direct-Drive GaN Architecture

The LMG3425R030 uses a series Si FET to ensure the power IC stays off when VDD bias power is not applied. When the VDD bias power is off, the series Si FET is interconnected with the GaN device in a cascode mode, which is shown in the Functional Block Diagram. The gate of the GaN device is held within a volt of the series Si FET's source. When a high voltage is applied on the drain and the silicon FET blocks the drain voltage, the VGS of the GaN device decreases until the GaN device passes the threshold voltage. Then, the GaN device is turned off and blocks the remaining major part of drain voltage. There is an internal clamp to make sure that the VDS of the Si FET does not exceed its maximum rating. This feature avoids the avalanche of the series Si FET when there is no bias power.

When LMG3425R030 is powered up with VDD bias power, the internal buck-boost converter generates a negative voltage (VVNEG) that is sufficient to directly turn off the GaN device. In this case, the series Si FET is held on and the GaN device is gated directly with the negative voltage.

Comparing with traditional cascode drive GaN architecture, where the GaN gate is grounded and the Si MOSFET gate is being driven to control the GaN device, direct-drive configuration has multiple advantages. First, as the Si MOSFET does need to switch in every switching cycle, GaN gate-to-source charge (QGS) is lower and there’s no Si MOSFET reverse-recovery related losses. Second, the voltage distribution between the GaN and Si MOSFET in off-mode in a cascode configuration can cause the MOSFET to avalanche due to high GaN drain-to-source capacitance (CDS). Finally, the switching slew rate in direct-drive configuration can be controlled while cascode drive cannot. More information about the direct-drive GaN architecture can be found in Direct-drive configuration for GaN devices.