SLOS856B June   2013  – May 2017 OPA2322-Q1 , OPA322-Q1 , OPA4322-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information: OPA322-Q1
    5. 6.5 Thermal Information: OPA2322-Q1
    6. 6.6 Thermal Information: OPA4322-Q1
    7. 6.7 Electrical Characteristics
  7. Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Operating Voltage
      2. 8.3.2 Input and ESD Protection
      3. 8.3.3 Phase Reversal
      4. 8.3.4 Feedback Capacitor Improves Response
      5. 8.3.5 EMI Susceptibility and Input Filtering
      6. 8.3.6 Output Impedance
      7. 8.3.7 Capacitive Load and Stability
      8. 8.3.8 Overload Recovery Time
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Active Filter
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
      2. 12.1.2 Development Support
        1. 12.1.2.1 TINA-TI™ (Free Software Download)
        2. 12.1.2.2 DIP Adapter EVM
        3. 12.1.2.3 Universal Operational Amplifier EVM
        4. 12.1.2.4 TI Precision Designs
        5. 12.1.2.5 WEBENCH Filter Designer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Community Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Specifications

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage Supply voltage, VS = (V+) – (V–) 6 V
Signal input pins(2) (V–) – 0.5 (V+) + 0.5 V
Current Signal input pins(2) –10 10 mA
Output short-circuit(3) Continuous
Temperature Junction, TJ 150 °C
Storage, Tstg –65 150 °C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails must be current limited to 10 mA or less.
Short-circuit to ground, one amplifier per package.

ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±4000 V
Charged-device model (CDM), per AEC Q100-011 ±1000
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VS Specified voltage 1.8 5.5 V
TA Specified temperature –40 125 °C

Thermal Information: OPA322-Q1

THERMAL METRIC(1) OPA322-Q1 UNIT
DBV (SOT-23)
5 PINS
RθJA Junction-to-ambient thermal resistance 219.3 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 107.5 °C/W
RθJB Junction-to-board thermal resistance 57.5 °C/W
ψJT Junction-to-top characterization parameter 7.4 °C/W
ψJB Junction-to-board characterization parameter 56.9 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

Thermal Information: OPA2322-Q1

THERMAL METRIC(1) OPA2322-Q1 UNIT
DGK (VSSOP)
8 PINS
RθJA Junction-to-ambient thermal resistance 174.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 43.9 °C/W
RθJB Junction-to-board thermal resistance 95 °C/W
ψJT Junction-to-top characterization parameter 2 °C/W
ψJB Junction-to-board characterization parameter 93.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

Thermal Information: OPA4322-Q1

THERMAL METRIC(1) OPA4322-Q1 UNIT
PW (TSSOP)
14 PINS
RθJA Junction-to-ambient thermal resistance 109.8 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 34.9 °C/W
RθJB Junction-to-board thermal resistance 52.5 °C/W
ψJT Junction-to-top characterization parameter 2.2 °C/W
ψJB Junction-to-board characterization parameter 51.8 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

Electrical Characteristics

at VS = 1.8 V to 5.5 V, or ±0.9 V to ±2.75 V, TA = 25°C, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, VOUT = VS / 2, (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage 0.5 2 mV
dVOS/dT vs temperature VS = 5.5 V 1.8 6 μV/°C
PSR vs power supply VS = 1.8 V to 5.5 V TA = 25°C 10 50 μV/V
TA = –40°C to 125°C 20 65
Channel separation at 1 kHz 130 dB
INPUT VOLTAGE
VCM Common-mode voltage range (V–) – 0.1 (V+) + 0.1 V
CMRR Common-mode rejection ratio (V–) – 0.1 V < VCM < (V+) + 0.1 V TA = 25°C 90 100 dB
TA = –40°C to 125°C 90
INPUT BIAS CURRENT
IB Input bias current TA = 25°C ±0.2 ±10 pA
TA = –40°C to 85°C ±50
OPA322-Q1:
TA = –40°C to 125°C
±800
OPA2322-Q1:
TA = –40°C to 125°C
±400
OPA4322-Q1:
TA = –40°C to 125°C
±400
IOS Input offset current TA = 25°C ±0.2 ±10 pA
TA = –40°C to 85°C ±50
TA = –40°C to 125°C ±400
NOISE
Input voltage noise f = 0.1 Hz to 10 Hz 4.5 μVPP
en Input voltage noise density f = 1 kHz 8.5 nV/√Hz
f = 10 kHz 7
in Input current noise density f = 1 kHz 0.6 fA/√Hz
INPUT CAPACITANCE
Differential 5 pF
Common-mode 4 pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain 0.1 V < VO < (V+) – 0.1 V
RL = 10 kΩ
100 130 dB
PM Phase margin VS = 5 V
CL = 50 pF
47 °
FREQUENCY RESPONSE
GBP Gain bandwidth product VS = 5 V
CL = 50 pF, unity gain
20 MHz
SR Slew rate VS = 5 V
CL = 50 pF, G = 1
10 V/μs
tS Settling time VS = 5 V
CL = 50 pF, to 0.1%, 2-V step, G = 1
0.25 μs
VS = 5 V
CL = 50 pF, to 0.01%, 2-V step, G = 1
0.32
Overload recovery time VS = 5 V
CL = 50 pF
VIN × G > VS
100 ns
THD+N Total harmonic distortion + noise(1) VS = 5 V
CL = 50 pF
VO = 4 VPP, G = 1, f = 10 kHz
RL = 10 kΩ
0.0005%
VS = 5 V, CL = 50 pF, VO = 2 VPP, G = 1, f = 10 kHz
RL = 600 Ω
0.0011%
OUTPUT
VO Voltage output (swing from both rails) RL = 10 kΩ TA = 25°C 10 20 mV
TA = –40°C to 125°C 30
ISC Short-circuit current VS = 5.5 V ±65 mA
CL Capacitive load drive See Typical Characteristics
RO Open-loop output resistance IO = 0 mA
f = 1 MHz
90 Ω
POWER SUPPLY
VS Specified voltage range 1.8 5.5 V
IQ Quiescent current per amplifier OPA322-Q1:
IO = 0 mA
VS = 5.5 V
TA = 25°C 1.6 1.9 mA
TA = –40°C to 125°C 2
OPA2322-Q1:
IO = 0 mA
VS = 5.5 V
TA = 25°C 1.5 1.75
TA = –40°C to 125°C 1.85
OPA4322-Q1:
IO = 0 mA
VS = 5.5 V
TA = 25°C 1.4 1.65
TA = –40°C to 125°C 1.75
Power-on time VS+ = 0 V to 5 V, to 90% IQ level 28 μs
Third-order filter; bandwidth = 80 kHz at –3 dB