SCLS343S April   1996  – October 2016 SN74AHC1GU04

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics, VCC = 3.3 V ± 0.3 V
    7. 6.7 Switching Characteristics, VCC = 5 V ± 0.5 V
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DBV|5
  • DCK|5
  • DRL|5
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.5 7 V
VI Input voltage (2) –0.5 7 V
VO Output voltage (2) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 –20 mA
IOK Output clamp current VO < 0 or VO > VCC ±20 mA
IO Continuous output current VO = 0 to VCC ±25 mA
Continuous current through each VCC or GND ±50 mA
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) 2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) 1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage 2 5.5 V
VIH High-level input voltage VCC = 2 V 1.7 V
VCC = 3 V 2.4
VCC = 5.5 V 4.4
VIL Low-level input voltage VCC = 2 V 0.3 V
VCC = 3 V 0.6
VCC = 5.5 V 1.1
VIH Input voltage 0 5.5 V
VO Output voltage 0 VCC V
IOH High-level output current VCC = 2 V –50 µA
VCC = 3.3 V ± 0.3 V –4 mA
VCC = 5 V ± 0.5 V –8
IOL Low-level output current VCC = 2 V 50 µA
VCC = 3.3 V ± 0.3 V 4 mA
VCC = 5 V ± 0.5 V 8
TA Operating free-air temperature –40 125 °C
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs (SCBA004).

6.4 Thermal Information

THERMAL METRIC(1) SN74AHC1GU04 UNIT
DBV
(SOT-23)		 DCK
(SC70)		 DRL
(SOT)
5 PINS
RθJA Junction-to-ambient thermal resistance 231.3 287.6 328.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 119.9 97.7 105.1 °C/W
RθJB Junction-to-board thermal resistance 60.6 65. 150.3 °C/W
ψJT Junction-to-top characterization parameter 17.8 2.0 6.9 °C/W
ψJB Junction-to-board characterization parameter 60.1 64.2 148.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VCC TA = 25°C –40°C to +85°C –40°C to +125°C UNIT
MIN TYP MAX MIN MAX MIN MAX
VOH IOH = –50 µA 2 V 1.8 2 1.8 1.9 V
3 V 2.7 3 2.7 2.7
4.5 V 4 4.5 4 4.4
IOH = –4 mA 3 V 2.58 2.48 2.48
IOH = –8 mA 4.5 V 3.94 3.8 3.8
VOL IOL = 50 µA 2 V 0.2 0.2 0.1 V
3 V 0.3 0.3 0.1
4.5 V 0.5 0.5 0.1
IOL = 4 mA 3 V 0.36 0.44 0.44
IOL = 8 mA 4.5 V 0.36 0.44 0.44
II VI = 5.5 V or GND 0 V to
5.5 V		 ±0.1 ±1 ±1 µA
ICC VI = VCC or GND, IO = 0 5.5 V 1 10 10 µA
Ci VI = VCC or GND 5 V 2 10 10 10 pF

6.6 Switching Characteristics, VCC = 3.3 V ± 0.3 V

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 OUTPUT
CAPACITANCE		 TA = 25°C –40°C to +85°C –40°C to +125°C UNIT
MIN TYP MAX MIN MAX MIN MAX
tPLH A Y CL = 15 pF 5 7.1 1 8.5 1 9.5 ns
tPHL 5 7.1 1 8.5 1 9.5
tPLH A Y CL = 50 pF 7.5 10.6 1 12 1 13 ns
tPHL 7.5 10.6 1 12 1 13

6.7 Switching Characteristics, VCC = 5 V ± 0.5 V

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 OUTPUT
CAPACITANCE		 TA = 25°C –40°C to +85°C –40°C to +125°C UNIT
MIN TYP MAX MIN MAX MIN MAX
tPLH A Y CL = 15 pF 3.5 5.5 1 6 1 6.5 ns
tPHL 3.5 5.5 1 6 1 6.5
tPLH A Y CL = 50 pF 5 7 1 8 1 8.5 ns
tPHL 5 7 1 8 1 8.5

6.8 Operating Characteristics

VCC = 5 V, TA = 25°C
PARAMETER TEST CONDITIONS TYP UNIT
Cpd Power dissipation capacitance No load, f = 1 MHz 7.3 pF

6.9 Typical Characteristics

SN74AHC1GU04 D001_SCLS343.gif Figure 1. TPD vs Temperature
SN74AHC1GU04 D002_SCLS343.gif Figure 2. TPD vs VCC at 25°C