SLVSCD1C December   2013  – November 2015 TPS92561

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Basics of Operation
      2. 7.3.2 Sample Scope Capture
      3. 7.3.3 Output Current Control (ADJ, SEN)
      4. 7.3.4 Overcurrent Protection
      5. 7.3.5 Overvoltage Protection (OVP)
      6. 7.3.6 VCC Bias Supply and Start-Up
      7. 7.3.7 VCC and VP Connection
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Setting the Output Current
      2. 8.1.2 Selecting an Inductance
      3. 8.1.3 Important Design Consideration: Diode in Parallel With Sense Resistance
      4. 8.1.4 Gate Driver Operation
      5. 8.1.5 Output Bulk Capacitor
      6. 8.1.6 Phase Dimming
      7. 8.1.7 Example Circuits
    2. 8.2 Typical Applications
      1. 8.2.1 Offline Boost Schematic for Design Example
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Set the LED Current
            1. 8.2.1.2.1.1 Calculate ADJ Pin Resistors
            2. 8.2.1.2.1.2 Calculate the Current Sense Resistor
            3. 8.2.1.2.1.3 Calculate the SEN Pin Series Resistance
          2. 8.2.1.2.2 Calculate OVP Pin Resistors
          3. 8.2.1.2.3 Calculate Inductor Value and Ripple Current
          4. 8.2.1.2.4 Calculate the Output Capacitor Value
      2. 8.2.2 11-W, 120-VAC Input, 225-V Output, Offline Boost Design Example
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Set the LED Current
            1. 8.2.2.2.1.1 Calculate ADJ Pin Resistors
            2. 8.2.2.2.1.2 Calculate the Current Sense Resistor
            3. 8.2.2.2.1.3 Calculate the SEN Pin Series Resistance
          2. 8.2.2.2.2 Calculate OVP Pin Resistors
          3. 8.2.2.2.3 Calculate Inductor Value and Ripple Current
          4. 8.2.2.2.4 Calculate the Output Capacitor Value
        3. 8.2.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Pin voltage range(2) SRC, SEN, ADJ, OVP –0.3 5 V
VP –1 45
VCC –0.3 12
Tstg Storage temperature –60 150 °C
TJ Junction temperature Internally Limited
(1) Stresses beyond those listed under "absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(3) ±1500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) ESD testing is performed according to the respective JESD22 JEDEC standard.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VP Supply voltage 6.5 42 V
TJ Operating junction temperature –40 125 °C

6.4 Thermal Information

over operating free-air temperature range (unless otherwise noted)
THERMAL METRIC(1) TPS92561 UNIT
DGN (HVSSOP)
8 PINS
RθJA Junction-to-ambient thermal resistance 65.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 64.8 °C/W
RθJB Junction-to-board thermal resistance 44.8 °C/W
ψJT Junction-to-top characterization parameter 3.9 °C/W
ψJB Junction-to-board characterization parameter 44.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 13.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over recommended operating conditions with –40°C ≤ TJ ≤ 125°C. VCC = 12 V. CVCC = 0.47 µF
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
IIN VP operating current 6.5 V < VVP < 42 V 0.5 1 1.6 mA
VCC REGULATOR
VCC VCC regulated voltage ICC ≤ 10 mA
CVCC = 0.47 µF
12 V < VVP < 42 V		 7.75 8.35 8.95 V
ICC = 10 mA
CVCC = 0.47 µF
VVP = 6.5 V		 5.42 5.92 6.42
ICC = 0 mA
CVCC = 0.47 µF
VVP = 2 V		 2
ICC-LIM VCC current limit VCC = 0 V
6.5 V < VVP < 42 V		 20 34 56 mA
VCC-UVLO-UPTH VCC UVLO rising threshold 5 5.44 5.85 V
VCC-UVLO-LOTH VCC UVLO falling threshold 4.68 5.07 5.46 V
MOSFET GATE DRIVER
VGATE-HIGH Gate driver output high With respect to SRC
Sinking 100 mA from GATE
Force VCC = 9.5 V		 8 8.71 9.41 V
VGATE-LOW Gate driver output low With respect to SRC
Sourcing 100 mA to GATE		 10 180 350 mV
tRISE VGATE rise time CGATE = 1 nF across GATE and SRC 37 ns
tFALL VGATE fall time CGATE = 1 nF across GATE and SRC 30
tRISE-PG-DELAY VGATE low-to-high propagation delay CGATE = 1 nF across GATE and SRC 91
tFALL-PG-DELAY VGATE high-to-low propagation delay CGATE = 1 nF across GATE and SRC 112
CURRENT SOURCE AT ADJ PIN
IADJ-STARTUP Output current of ADJ pin at start-up VADJ < 90 mV 14 20 26 µA
CURRENT SENSE AMPLIFIER
VSEN-UPPER-TH VSEN upper threshold over VADJ VSEN – VADJ
VADJ = 0.2 V
VGATE at falling edge 		17.6 29.3 41 mV
VSEN-LOWER-TH VSEN lower threshold over VADJ VSEN – VADJ
VADJ = 0.2 V
VGATE at rising edge 		–40.7 –29.1 –17.5
VSEN-HYS VSEN hysteresis (VSEN-UPPER-TH – VSEN-LOWER-TH) 40.9 60 75.9
VSEN-OFFSET VSEN offset with respect to VADJ (VSEN-UPPER-TH + VSEN-LOWER-TH) / 2 –4 –0.1 4
OUTPUT OVERVOLTAGE PROTECTION (OVP)
VOVP-UPTH Output overvoltage detection upper threshold VOVP increasing, VGATE at falling edge 1.11 1.19 1.27 V
VOVP-HYS Output overvoltage detection hysteresis VOVP-UPTH – VOVP-LOTH 15 44 80 mV
THERMAL SHUTDOWN
TSD Thermal shutdown temperature TJ rising 165 °C
TSD-HYS Thermal shutdown temperature hysteresis TJ falling 30

6.6 Typical Characteristics

VP = VP_NOM = 12 V
TPS92561 C001_SLVSCD1.png
Figure 1. VP BIAS Current (Non-Switching) vs Temperature
TPS92561 C003_SLVSCD1.png
Figure 3. VCC UVLO vs Temperature
TPS92561 C005_SLVSCD1.png
Figure 5. VSEN Hysteresis vs Temperature
TPS92561 C002_SLVSCD1.png
Figure 2. VCC Voltage vs Temperature
TPS92561 C004_SLVSCD1.png
Figure 4. VSEN Switching Thresholds vs Temperature
TPS92561 C006_SLVSCD1.png
Figure 6. OVP Rising Threshold vs Temperature