JAJSHW8B september   2019  – october 2020 UCC23313

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Revision History
  6. Pin Configuration and Function
    1.     Pin Functions
  7. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  電力定格
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  安全限界値
    9. 6.9  Electrical Characteristics
    10. 6.10 スイッチング特性
    11. 6.11 Insulation Characteristics Curves
    12. 6.12 Typical Characteristics
  8. Parameter Measurement Information
    1. 7.1 Propagation Delay, rise time and fall time
    2. 7.2 IOH and IOL testing
    3. 7.3 CMTI Testing
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power Supply
      2. 8.3.2 Input Stage
      3. 8.3.3 Output Stage
      4. 8.3.4 Protection Features
        1. 8.3.4.1 Undervoltage Lockout (UVLO)
        2. 8.3.4.2 Active Pulldown
        3. 8.3.4.3 Short-Circuit Clamping
    4. 8.4 Device Functional Modes
      1. 8.4.1 ESD Structure
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting the Input Resistor
        2. 9.2.2.2 Gate Driver Output Resistor
        3. 9.2.2.3 Estimate Gate-Driver Power Loss
        4. 9.2.2.4 Estimating Junction Temperature
        5. 9.2.2.5 Selecting VCC Capacitor
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 PCB Material
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • DWY|6
サーマルパッド・メカニカル・データ
発注情報

Active Pulldown

The active pull-down function is used to pull the IGBT or MOSFET gate to the low state when no power is connected to the VCC supply. This feature prevents false IGBT and MOSFET turn-on by clamping VOUT pin to approximately 2V.

When the output stage of the driver is in an unbiased condition (VCC floating), the driver outputs (see Figure 8-4) are held low by an active clamp circuit that limits the voltage rise on the driver outputs. In this condition, the upper PMOS & NMOS are held off while the lower NMOS gate is tied to the driver output through an internal 500-kΩ resistor. In this configuration, the lower NMOS device effectively clamps the output (VOUT) to less than 2V.