JAJSE28B October   2017  – August 2018 UCC27710

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 概略回路図
    1.     標準的な伝播遅延の比較
  5. 5 改訂履歴
  6. 6 概要（続き）
  7. 7 Pin Configuration and Functions
    1.     Pin Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Dynamic Electrical Characteristics
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 VDD and Under Voltage Lockout
      2. 9.3.2 Input and Output Logic Table
      3. 9.3.3 Input Stage
      4. 9.3.4 Output Stage
      5. 9.3.5 Level Shift
      6. 9.3.6 Low Propagation Delays and Tightly Matched Outputs
      7. 9.3.7 Parasitic Diode Structure
    4. 9.4 Device Functional Modes
      1. 9.4.1 Minimum Input Pulse Operation
      2. 9.4.2 Output Interlock and Dead Time
      3. 9.4.3 Operation Under 100% Duty Cycle Condition
      4. 9.4.4 Operation Under Negative HS Voltage Condition
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Selecting HI and LI Low Pass Filter Components (RHI, RLI, CHI, CLI)
        2. 10.2.2.2 Selecting Bootstrap Capacitor (CBOOT)
        3. 10.2.2.3 Selecting VDD Bypass/Holdup Capacitor (CVDD) and Rbias
        4. 10.2.2.4 Selecting Bootstrap Resistor (RBOOT)
        5. 10.2.2.5 Selecting Gate Resistor RON/ROFF
        6. 10.2.2.6 Selecting Bootstrap Diode
        7. 10.2.2.7 Estimate the UCC27710 Power Losses (PUCC27710)
        8. 10.2.2.8 Estimating Junction Temperature
        9. 10.2.2.9 Operation With IGBT's
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 ドキュメントのサポート
      1. 13.1.1 関連資料
    2. 13.2 関連リンク
    3. 13.3 コミュニティ・リソース
    4. 13.4 商標
    5. 13.5 静電気放電に関する注意事項
    6. 13.6 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

10.2.2.9 Operation With IGBT's

The UCC27710 is well suited for driving IGBT's in various applications including motor drive and inverters. The design procedure is as the previous MOSFET example but the VDD voltage is typically 15 V to drive IGBT devices. Use the power transistor parameters and application specifications to determine the detail design and component values. See Figure 46 below for a typical IGBT application.

UCC27710 igbt_slusdo5.gifFigure 46. Typical IGBT Application Schematic

Refer to Figure 47 below for the UCC27710 driving 27-A, 650-V IGBT's in a high voltage sync buck configuration. The input voltage is 400 V, output 100 V with a 150-W output load. Channel 1 is the inductor current, Channel 2 is high-side IGBT VGE, Channel 3 is low-side IGBT VGE, and Channel 4 is the switch node or HS voltage.

UCC27710 igbtscope_slusdo5.gifFigure 47. IGBT Sync-Buck Operating at 400 V and 150 W