SLUSBD8E February   2013  – December 2014 UCC28251

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1 UCC28251 Enhancements Over the UCC28250
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  VDD (5/12)
      2. 8.3.2  VREF (Reference Generator) (20/7)
      3. 8.3.3  EN (Enable Pin) (18/5)
      4. 8.3.4  RT (Oscillator Frequency Set and Synchronization) (15/2)
      5. 8.3.5  SP (Synchronous Rectifier Turn-Off to Primary Output Turn-On Dead Time Programming) (13/19)
      6. 8.3.6  PS (Primary Output Turn-Off to Synchronous Rectifier Turn-On Dead Time Programming) (11/18)
      7. 8.3.7  RAMP/CS (PWM Ramp Input or Current Sense Input) (16/3)
        1. 8.3.7.1 RAMP: Voltage Mode Control With Feed-Forward Operation
        2. 8.3.7.2 CS: Current Mode Control
      8. 8.3.8  REF/EA+ (1/8)
      9. 8.3.9  FB/EA- (2/9)
      10. 8.3.10 COMP (3/10)
      11. 8.3.11 VSENSE (14/1)
      12. 8.3.12 SS (Soft Start Programming Pin) (13/20)
      13. 8.3.13 ILIM (Current Limit for Cycle-by-Cycle Over-Current Protection) (17/4)
      14. 8.3.14 HICC (10/17)
      15. 8.3.15 OVP/OTP (19/6)
      16. 8.3.16 OUTA (9/16) and OUTB (8/15)
      17. 8.3.17 SRA (7/14) and SRB (6/13)
      18. 8.3.18 GND (4/11)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Error Amplifier and PWM Generation
      2. 9.1.2 Prebiased Start Up
        1. 9.1.2.1 Secondary-Side Control
        2. 9.1.2.2 Primary-Side Control
      3. 9.1.3 Voltage Mode Control and Input Voltage Feed-Forward
        1. 9.1.3.1 Condition 1
        2. 9.1.3.2 Condition 2
        3. 9.1.3.3 Condition 3
      4. 9.1.4 Peak Current Mode Control
      5. 9.1.5 Cycle-by-Cycle Current Limit and Hiccup Mode Protection
    2. 9.2 Typical Applications
      1. 9.2.1 Circuit Diagram in Design Example
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Step 1: Power Stage Design
          2. 9.2.1.2.2 Step 2: Feedback Loop Design
          3. 9.2.1.2.3 Step 3: Programming The Device
            1. 9.2.1.2.3.1 Step 3-1
            2. 9.2.1.2.3.2 Step 3-2: Determine Ramp Resistance and Capacitance
          4. 9.2.1.2.4 Step 3-3: Determine Soft-Start Capacitance
          5. 9.2.1.2.5 Step 3-4: Determine Dead-Time Resistance
          6. 9.2.1.2.6 Step 3-5: Determine OCP Hiccup Off-Time Capacitance
          7. 9.2.1.2.7 Step 3-6: Determine Primary-Side OVP Resistance
          8. 9.2.1.2.8 Step 3-7: Select Capacitance for VDD and VREF
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Secondary-Side Half-Bridge Controller With Synchronous Rectification
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Protection
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

12 Device and Documentation Support

12.1 Documentation Support

12.1.1 Related Documentation

For related documentation see the following:

  • Designing UCC28250 as a Secondary Side Control for Output Turn-On with a Pre-Bias Condition, SLAA477
  • Using the UCC28250EVM-564, SLUU441

12.2 Trademarks

All trademarks are the property of their respective owners.

12.3 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

12.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.