JAJSH84G May   2014  – October 2019 SN65HVD70 , SN65HVD71 , SN65HVD73 , SN65HVD74 , SN65HVD76 , SN65HVD77

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     ブロック図
  4. 改訂履歴
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions — SOIC-8 and MSOP-8
    2.     Pin Functions — MSOP–10
    3.     Pin Functions — SOIC-14
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information — D Packages
    5. 7.5  Thermal Information — DGS and DGK Packages
    6. 7.6  Power Dissipation
    7. 7.7  Electrical Characteristics
    8. 7.8  Switching Characteristics — 400 kbps
    9. 7.9  Switching Characteristics — 20 Mbps
    10. 7.10 Switching Characteristics — 50 Mbps
    11. 7.11 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
      1. 9.4.1 Equivalent Circuits
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1.      Master Enable Control
      2.      Slave Enable Control
      3. 10.2.1 Design Parameters
        1. 10.2.1.1 Data Rate and Bus Length
        2. 10.2.1.2 Stub Length
        3. 10.2.1.3 Bus Loading
        4. 10.2.1.4 Receiver Failsafe
        5. 10.2.1.5 Transient Protection
      4. 10.2.2 Detailed Design Procedure
      5. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 デバイス・サポート
      1. 13.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 13.2 関連リンク
    3. 13.3 ドキュメントの更新通知を受け取る方法
    4. 13.4 コミュニティ・リソース
    5. 13.5 商標
    6. 13.6 静電気放電に関する注意事項
    7. 13.7 Glossary
  14. 14メカニカル、パッケージ、および注文情報

Layout Guidelines

On-chip IEC-ESD protection is good for laboratory and portable equipment but never sufficient for EFT and surge transients occurring in industrial environments. Therefore robust and reliable bus node design requires the use of external transient protection devices.

Because ESD and EFT transients have a wide frequency bandwidth from approximately 3-MHz to 3-GHz, high-frequency layout techniques must be applied during PCB design.

For successful PCB design, begin with the design of the protection circuit (see Figure 41).

  1. Place the protection circuitry close to the bus connector to prevent noise transients from penetrating your board.
  2. Use VCC and ground planes to provide low-inductance. Note that high-frequency currents follow the path of least inductance and not the path of least impedance.
  3. Design the protection components into the direction of the signal path. Do not force the transient currents to divert from the signal path to reach the protection device.
  4. Apply 100-nF to 220-nF bypass capacitors as close as possible to the VCC-pins of transceiver, UART, controller ICs on the board (see Figure 41).
  5. Use at least two vias for VCC and ground connections of bypass capacitors and protection devices to minimize effective via-inductance (see Figure 41).
  6. Use 1-kΩ to 10-kΩ pullup and pulldown resistors for enable lines to limit noise currents in theses lines during transient events (see Figure 41).
  7. Insert pulse-proof resistors into the A and B bus lines if the TVS clamping voltage is higher than the specified maximum voltage of the transceiver bus pins. These resistors limit the residual clamping current into the transceiver and prevent it from latching up (see Figure 41).
  8. While pure TVS protection is sufficient for surge transients up to 1 kV, higher transients require metal-oxide varistors (MOVs) which reduce the transients to a few hundred volts of clamping voltage, and transient blocking units (TBUs) that limit transient current to less than 1 mA.