SBOK078 October   2023 SN54SC4T08-SEP

PRODUCTION DATA  

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE)
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 SEL Results
    2. 5.2 Event Rate Calculations
  9. 6Summary
  10. 7References

Summary

The purpose of this study was to characterize the effects of heavy-ion irradiation on the single-event latch-up (SEL) performance of the SN54SC4T08-SEP, a radiation-tolerant, four-channel two-input positive AND gate with logic-level shifter. Heavy-ions with an LETEFF of 43 MeV-cm2 / mg were used for the SEE characterization. The SEE results demonstrated that the SN54SC4T08-SEP is SEL-free up to LETEFF = 43 MeV × cm2 / mg and across the full electrical specifications. CREME96-based worst-week event-rate calculations for LEO (ISS) and GEO orbits for the DSEE are presented for reference.