SBOU276 January   2023 INA226 , INA226-Q1

 

  1.   SBOU276 Abstract
  2. 1Trademarks
  3. 2Overview
    1. 2.1 Kit Contents
    2. 2.2 Related Documentation From Texas Instruments
  4. 3Hardware
    1. 3.1 Features
  5. 4Operation
    1. 4.1 Quick Start Setup
    2. 4.2 EVM Operation
      1. 4.2.1 Setup
        1. 4.2.1.1 Driver Installation
        2. 4.2.1.2 Firmware
          1. 4.2.1.2.1 Firmware Debug
        3. 4.2.1.3 GUI Setup and Connection
          1. 4.2.1.3.1 Initial Setup
          2. 4.2.1.3.2 GUI to EVM Connection
      2. 4.2.2 GUI Operation
        1. 4.2.2.1 Homepage Tab
        2. 4.2.2.2 Configuration Tab
        3. 4.2.2.3 Registers Tab
        4. 4.2.2.4 Results Data Tab
      3. 4.2.3 Current Sensing Operation
        1. 4.2.3.1 Detailed Setup
      4. 4.2.4 Direct EVM USB Communication
        1. 4.2.4.1 Standard USB Read and Write Operations
        2. 4.2.4.2 Collect Data Through the USB BULK Channel
      5. 4.2.5 PAMB Compatibility
  6. 5Circuitry
    1. 5.1 Current Sensing IC
    2. 5.2 Input Signal Path
    3. 5.3 Digital Circuitry
  7. 6Schematics, PCB Layout, and Bill of Materials
    1. 6.1 Schematics
    2. 6.2 PCB Layout
    3. 6.3 Bill of Materials

2 Overview

The INA226 is a current shunt and power monitor with an I2C or SMBUS-compatible interface. The device monitors both a shunt voltage drop and bus supply voltage. Programmable calibration value, conversion times, and averaging, combined with an internal multiplier, enable direct readouts of current in amperes and power in watts.

The INA226 senses current on common-mode bus voltages that can vary from 0 V to 36 V, independent of the supply voltage. The device operates from a single 2.7-V to 5.5-V supply, drawing a typical of 330 µA of supply current. The device is specified over the operating temperature range between -40°C and 125°C and features up to 16 programmable addresses on the I2C-compatible interface.

Table 2-1 Device Summary
PRODUCTDIGITAL PROTOCOLADC RESOLUTIONMAX GAIN ERRORMAX OFFSET VOLTAGE
INA226I2C16-bit0.1%±10 µV