SLUU182A January   2004  – March 2022 TPS5124

 

  1.   Trademarks
  2. 1Introduction
  3. 2Features
  4. 3Schematic
  5. 4Design Procedure
    1. 4.1 Frequency Setting
    2. 4.2 Inductance Value
    3. 4.3 Output Capacitors
    4. 4.4 Input Capacitors
      1. 4.4.1 Case One: D1, D2 < 0.5
      2. 4.4.2 Case Two: D2 < 0.5 < D1
    5. 4.5 Compensation Design
    6. 4.6 Current Limiting
    7. 4.7 Timer Latch
      1. 4.7.1 Undervoltage Protection
      2. 4.7.2 Short Circuit Protection
      3. 4.7.3 Overvoltage Protection
      4. 4.7.4 Disabling the Protection Function
        1. 4.7.4.1 Disabling the Overcurrent Protection
        2. 4.7.4.2 Disabling the Overvoltage Protection or Undervoltage Protection
  6. 5Test Results
    1. 5.1 Efficiency Curves
    2. 5.2 Typical Operating Waveform
    3. 5.3 Start-Up Waveform
    4. 5.4 Output Ripple Voltage and Load Transient
  7. 6Layout Guidelines
    1. 6.1 Low-Side MOSFET
    2. 6.2 Connections
    3. 6.3 Bypass Capacitor
    4. 6.4 Bootstrap Capacitor
    5. 6.5 Output Voltage
  8. 7PCB Layout
  9. 8List of Materials
  10. 9Revision History

6.2 Connections

  • Connections from the drivers to the gate of the power MOSFETs should be as short and wide as possible to reduce stray inductance. This becomes more critical if external gate resistors are not used. In addition, an external gate resistor for the high-side FETs will considerably reduce the noise at the LL node and improve the performance of the current limit function.
  • The connection from LL to the power MOSFETs should be as short and wide as possible.