SLVAE32B August   2018  – December 2023 TPS7H2201-SP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1 Device Overview
  5. 2 Single-Event Effects
  6. 3 Test Device and Evaluation Board Information
  7. 4 Depth, Range, and LETEFF Calculation
  8. 5 Irradiation Facility and Setup
  9. 6 Test Setup and Procedures
  10. 7 Single-Event-Latchup (SEL), Single-Event-Burnout (SEB), and Single-Event-Gate-Rupture (SEGR)
    1. 7.1 Single-Event-Latchup (SEL)
    2. 7.2 Single-Event-Burnout (SEB) and Single-Event-Gate-Rupture (SEGR)
  11. 8 Single Event Transient (SET)
  12. 9 Total Ionizing Dose From SEE Experiments
  13. 10Orbital Environment Estimations
  14. 11Confidence Interval Calculations
    1. 11.1 Rate Orbit Calculation
  15. 12Summary
  16. 13References
  17. 14Revision History

Abstract

The purpose of this study was to characterize the single-event effect (SEE) performance due to heavy-ion irradiation of the TPS7H2201-SP. Heavy-ions were used to irradiate six devices in 14 runs with a flux of approximately 105 ions / cm2 × s and fluence of approximately 107 ions / cm2. The results demonstrate that the TPS7H2201-SP is SEL, SEB, SEGR, SET, and SEFI free up to LETEFF = 75 MeV·cm2/mg (at 125°C for SEL and 25°C for SET, SEB, SEGR, and SEFI), and across the full electrical specifications. This report uses the QMLV TPS7H2201-SP device in a ceramic package. It is also applicable for the QMLP TPS7H2201-SP device in a plastic package which uses the same die as the QMLV device.