SBOK084 December   2023 SN54SC3T97-SEP , SN54SC3T98-SEP , SN54SC4T00-SEP , SN54SC4T02-SEP , SN54SC4T125-SEP , SN54SC4T32-SEP , SN54SC4T86-SEP

PRODUCTION DATA  

  1.   1
  2.   SN54SC4T125-SEP Single-Event Latch-Up (SEL) Radiation Report
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE)
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 SEL Results
    2. 5.2 Event Rate Calculations
  9. 6Summary
  10. 7References

7 References

  1. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717.
  2. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532.
  3. Texas A&M University, Texas A&M University Cyclotron Institute Radiation Effects Facility, webpage.
  4. James F. Ziegler, Stopping and Range of Ions in Matter, webpage.
  5. D. Kececioglu, “Reliability and Life Testing Handbook”, Vol. 1, PTR Prentice Hall, New Jersey,1993, pp. 186-193.
  6. Vanderbilt University, ISDE CRÈME-MC, webpage.
  7. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160.
  8. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149.