SBOS995A October   2019  – November 2020 INA290-Q1

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Amplifier Input Common-Mode Range
        1. 7.3.1.1 Input-Signal Bandwidth
        2. 7.3.1.2 Low Input Bias Current
        3. 7.3.1.3 Low VSENSE Operation
        4. 7.3.1.4 Wide Fixed Gain Output
        5. 7.3.1.5 Wide Supply Range
    4. 7.4 Device Functional Modes
      1. 7.4.1 Unidirectional Operation
      2. 7.4.2 High Signal Throughput
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 RSENSE and Device Gain Selection
      2. 8.1.2 Input Filtering
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Overload Recovery With Negative VSENSE
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002, all pins(1)
HBM ESD Classification Level 2
±2000 V
Charged device model (CDM), per AEC Q100-011, all pins
CDM ESD Classification Level C6
±1000
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.