SLUSDK4E may   2020  – july 2023 UCC28782

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Revision History
  6. Device Comparison Table
  7. Pin Configuration and Functions
    1.     Pin Functions
  8. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Detailed Pin Description
      1. 8.3.1  BUR Pin (Programmable Burst Mode)
      2. 8.3.2  FB Pin (Feedback Pin)
      3. 8.3.3  REF Pin (Internal 5-V Bias)
      4. 8.3.4  VDD Pin (Device Bias Supply)
      5. 8.3.5  P13 and SWS Pins
      6. 8.3.6  S13 Pin
      7. 8.3.7  IPC Pin (Intelligent Power Control Pin)
      8. 8.3.8  RUN Pin (Driver and Bias Source for Isolator)
      9. 8.3.9  PWMH and AGND Pins
      10. 8.3.10 PWML and PGND Pins
      11. 8.3.11 SET Pin
      12. 8.3.12 RTZ Pin (Sets Delay for Transition Time to Zero)
      13. 8.3.13 RDM Pin (Sets Synthesized Demagnetization Time for ZVS Tuning)
      14. 8.3.14 BIN, BSW, and BGND Pins
      15. 8.3.15 XCD Pin
      16. 8.3.16 CS, VS, and FLT Pins
    4. 8.4 Device Functional Modes
      1. 8.4.1  Adaptive ZVS Control with Auto-Tuning
      2. 8.4.2  Dead-Time Optimization
      3. 8.4.3  EMI Dither and Dither Fading Function
      4. 8.4.4  Control Law across Entire Load Range
      5. 8.4.5  Adaptive Amplitude Modulation (AAM)
      6. 8.4.6  Adaptive Burst Mode (ABM)
      7. 8.4.7  Low Power Mode (LPM)
      8. 8.4.8  First Standby Power Mode (SBP1)
      9. 8.4.9  Second Standby Power Mode (SBP2)
      10. 8.4.10 Startup Sequence
      11. 8.4.11 Survival Mode of VDD (INT_STOP)
      12. 8.4.12 Capacitor Voltage Balancing Function
      13. 8.4.13 Device Functional Modes for Bias Regulator Control
        1. 8.4.13.1 Mitigation of Switching Interaction with ACF Converter
        2. 8.4.13.2 Protection Functions for the Bias Regulator
        3. 8.4.13.3 BIN-Pin Related Protections
        4. 8.4.13.4 BSW-Pin Related Protections
      14. 8.4.14 System Fault Protections
        1. 8.4.14.1  Brown-In and Brown-Out
        2. 8.4.14.2  Output Over-Voltage Protection (OVP)
        3. 8.4.14.3  Input Over Voltage Protection (IOVP)
        4. 8.4.14.4  Over-Temperature Protection (OTP) on FLT Pin
        5. 8.4.14.5  Over-Temperature Protection (OTP) on CS Pin
        6. 8.4.14.6  Programmable Over-Power Protection (OPP)
        7. 8.4.14.7  Peak Power Limit (PPL)
        8. 8.4.14.8  Output Short-Circuit Protection (SCP)
        9. 8.4.14.9  Over-Current Protection (OCP)
        10. 8.4.14.10 External Shutdown
        11. 8.4.14.11 Internal Thermal Shutdown
      15. 8.4.15 Pin Open/Short Protections
        1. 8.4.15.1 Protections on CS pin Fault
        2. 8.4.15.2 Protections on P13 pin Fault
        3. 8.4.15.3 Protections on RDM and RTZ pin Faults
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application Circuit
      1. 9.2.1 Design Requirements for a 65-W USB-PD Adapter Application
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Bulk Capacitance and Minimum Bulk Voltage
        2. 9.2.2.2 Transformer Calculations
          1. 9.2.2.2.1 Primary-to-Secondary Turns Ratio (NPS)
          2. 9.2.2.2.2 Primary Magnetizing Inductance (LM)
          3. 9.2.2.2.3 Primary Winding Turns (NP)
          4. 9.2.2.2.4 Secondary Winding Turns (NS)
          5. 9.2.2.2.5 Auxiliary Winding Turns (NA)
          6. 9.2.2.2.6 Winding and Magnetic Core Materials
        3. 9.2.2.3 Clamp Capacitor Calculation
          1. 9.2.2.3.1 Primary-Resonance ACF
          2. 9.2.2.3.2 Secondary-Resonance ACF
        4. 9.2.2.4 Bleed-Resistor Calculation
        5. 9.2.2.5 Output Filter Calculation
        6. 9.2.2.6 Calculation of ZVS Sensing Network
        7. 9.2.2.7 Calculation of BUR Pin Resistances
        8. 9.2.2.8 Calculation of Compensation Network
      3. 9.2.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1  General Considerations
      2. 11.1.2  RDM and RTZ Pins
      3. 11.1.3  SWS Pin
      4. 11.1.4  VS Pin
      5. 11.1.5  BUR Pin
      6. 11.1.6  FB Pin
      7. 11.1.7  CS Pin
      8. 11.1.8  BIN Pin
      9. 11.1.9  BSW Pin
      10. 11.1.10 AGND Pin
      11. 11.1.11 BGND Pin
      12. 11.1.12 PGND Pin
      13. 11.1.13 EP Thermal Pad
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  14. 13Mechanical, Packaging, and Orderable Information

RTZ Pin (Sets Delay for Transition Time to Zero)

The dead-time between PWMH falling edge and PWML rising edge (tZ) serves as the wait time for VSW transition from its high level down to the target ZVS point. Since the optimal tZ varies with VBULK, the internal dead-time optimizer automatically extends tZ as VBULK is less than the highest voltage of the input bulk capacitor (VBULK(MAX)). The circulating energy for ZVS can be further reduced, obtaining higher efficiency at low line versus a fixed dead-time over a wide line voltage range. A resistor on the RTZ pin (RRTZ) programs the minimum tZ (tZ(MIN)) at VBULK(MAX), which is the sum of the propagation delay of the high-side driver (tD(DR)) and the minimum resonant transition time of VSW falling edge (tLC(MIN)).

Equation 9. GUID-7DBBC391-0D78-4EBA-99A7-F85FA31EA8B8-low.gif

where KRTZ is equal to 11.2×1011 (unit: F-1) for VSET = 0 V, and 5.6×1011(unit: F-1) for VSET = 5 V.

GUID-34C0E216-920D-4BEC-9A60-375E34AE4F3E-low.gifFigure 8-14 RTZ Setting for the Falling-edge Transition of VSW

As illustrated in Figure 8-14, when PWMH turns off QH after tD(DR) delay, the negative magnetizing current (iM-) becomes an initial condition of the resonant tank formed by magnetizing inductance (LM) and the switch-node capacitance (CSW). CSW is the total capacitive loading on the switch-node, including all junction capacitance (COSS) of switching devices, stray capacitance of the boot-strap diode, intra-winding capacitance of the transformer, the snubber capacitor, and parasitic capacitance of the PCB traces between switch-node and ground. Unlike a conventional valley-switching flyback converter, the resonance of an active clamp flyback converter at high line does not begin at the peak of the sinusoidal trajectory. The transition time of VSW takes less than half of the resonant period. The following tLC(MIN) expression quantifies the transition time for RRTZ calculation, where an arccosine term represents the initial angle at the beginning of resonance. As an example, the value of π minus the arccosine term at VBULK(MAX) of 375 V, VO of 20 V, and NPS of 5 is around 0.585π, which is close to one quarter of the resonant period.

Equation 10. GUID-FA99110A-245C-4D4D-BC86-A3E20C0343CB-low.gif