SLVSAC4B November   2010  – December 2015 TLV62065

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Mode Selection
      2. 7.3.2 Enable
      3. 7.3.3 Undervoltage Lockout
      4. 7.3.4 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Soft-Start
      2. 7.4.2 Power-Save Mode
        1. 7.4.2.1 100% Duty Cycle Low Dropout Operation
      3. 7.4.3 Internal Current Limit / Fold-back Current Limit for Short-Circuit Protection
      4. 7.4.4 Output Capacitor Discharge
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Output Voltage Setting
        2. 8.2.2.2 Output Filter Design (Inductor and Output Capacitor)
          1. 8.2.2.2.1 Inductor Selection
          2. 8.2.2.2.2 Output Capacitor Selection
          3. 8.2.2.2.3 Input Capacitor Selection
        3. 8.2.2.3 Checking Loop Stability
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage(2) AVIN, PVIN –0.3 7 V
EN, MODE, FB –0.3 VIN + 0.3 < 7 V
SW –0.3 7 V
Current (source) Peak output Internally limited A
Junction temperature, TJ –40 125 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
Machine model ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
AVIN , PVIN Supply voltage 2.9 5.5 V
Output current capability 2000 mA
Output voltage range for adjustable voltage 0.8 VIN V
L Effective inductance 0.7 1 1.6 µH
COUT Effective output capacitance 4.5 10 22 µF
TA Operating ambient temperature(1) –40 85 °C
TJ Operating junction temperature –40 125 °C
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part/package in the application (RθJA), as given by the following equation: TA(max) = TJ(max) – (RθJA x PD(max))

6.4 Thermal Information

THERMAL METRIC(1) TLV62065 UNIT
DSG (WSON)
8 PINS
RθJA Junction-to-ambient thermal resistance 64.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 82.6 °C/W
RθJB Junction-to-board thermal resistance 34.5 °C/W
ψJT Junction-to-top characterization parameter 1.8 °C/W
ψJB Junction-to-board characterization parameter 34.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 6.8 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Over full operating ambient temperature range. Typical values are at TA = 25°C. Unless otherwise noted, specifications apply for condition VIN = EN = 3.6 V. External components CIN = 10 μF 0603, COUT = 10μF 0603, L = 1.0 μH (see the parameter measurement information).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
VIN Input voltage range 2.9 5.5 V
IQ Operating quiescent current IOUT = 0 mA, device operating in PFM mode
and device not switching		 18 μA
ISD Shutdown current EN = GND, current into AVIN and PVIN combined 0.1 1 μA
VUVLO Undervoltage lockout threshold Falling 1.73 1.78 1.83 V
Rising 1.9 1.95 1.99
ENABLE, MODE
VIH High level input voltage 2.9 V ≤ VIN ≤ 5.5 V 1.0 5.5 V
VIL Low level input voltage 2.9 V ≤ VIN ≤ 5.5 V 0 0.4 V
IIN Input bias current EN, Mode tied to GND or AVIN 0.01 1 μA
POWER SWITCH
RDS(on) High-side MOSFET on-resistance VIN = 3.6 V (2) 120 180 mΩ
VIN = 5 V(2) 95 150
RDS(on) Low-side MOSFET on-resistance VIN = 3.6 V(2) 90 130 mΩ
VIN = 5 V(2) 75 100
ILIMF Forward current limit MOSFET high-side and low-side 3 V ≤ VIN ≤ 3.6 V 2300 2750 mA
TSD Thermal shutdown Increasing junction temperature 150 °C
Thermal shutdown hysteresis Decreasing junction temperature 10
OSCILLATOR
fSW Oscillator frequency 2.9 V ≤ VIN ≤ 5.5 V 2.6 3 3.4 MHz
OUTPUT
Vref Reference voltage 600 mV
VFB(PWM) Feedback voltage PWM mode PWM operation, MODE = VIN ,
2.9 V ≤ VIN  ≤ 5.5 V, 0 mA load 		–2% 0% 2%
VFB(PFM) Feedback voltage PFM mode, voltage positioning Device in PFM mode, voltage positioning active(1) 1%
VFB Load regulation –0.5% A
Line regulation 0% V
R(Discharge) Internal discharge resistor Activated with EN = GND, 2.9 V ≤ VIN≤ 5.5 V, 0.8 ≤ VOUT ≤ 3.6 V 200 Ω
tSTART Start-up time Time from active EN to reach 95% of VOUT 500 μs
(1) In PFM mode, the internal reference voltage is set to typ. 1.01×Vref. See the parameter measurement information.
(2) Maximum value applies for TJ = 85°C

6.6 Typical Characteristics

TLV62065 sdown_vin_lvs833.gif
Figure 1. Shutdown Current vs Input Voltage
TLV62065 osf_vin_lvs833.gif
Figure 3. Oscillator Frequency vs Input Voltage
TLV62065 rdson2_vin_lvs833.gif
Figure 5. RDSON High-Side Switch
TLV62065 qui_vin_lvs833.gif
Figure 2. Quiescent Current vs Input Voltage
TLV62065 rdson1_vin_lvs833.gif
Figure 4. RDSON Low-Side Switch
TLV62065 rdis_vin_lvs833.gif
Figure 6. RDischarge vs Input Voltage