SLYT844 September   2023 LMG3522R030 , TMS320F280049C

 

  1.   1
  2. 1Introduction
  3. 2Topology overview
  4. 3AC dropout technical challenges
  5. 4AC dropout solution
  6. 5Results
  7. 6References

Introduction

A loss of power in data center server power-supply units can interrupt everything from entertainment to financial transactions to home security systems. Specifications such as the V2 Power Shelf Specification from the Open Compute Project (OCP) [1] emphasize the need to reduce server downtime with robust AC dropout control algorithms. In addition, the need for cost-effective solutions in data centers to improve power factor correction (PFC) light load and peak efficiency while shrinking passive components is becoming difficult with conventional continuous conduction mode control [2-8].

To address this problem, TI developed a gallium nitride (GaN)-based high-density design using two-phase integrated triangular current mode (iTCM) PFC (Figure 1) [9]. Low-value inductors operating at a high frequency have enabled the high efficiency (>99%) and power density (120 W/in3) of this design. These small inductors present a unique problem to AC dropout recovery in that only a few microseconds of switch on-time can result in over 70 A of switch current. In addition, any delays in timing can also result in significant reverse current, further exacerbating PFC recovery. Keeping the current levels at a safe magnitude and preventing reverse current required the development of a new solution to the AC dropout and recovery problem. This article discusses this solution with lab verification data based on the Variable-Frequency, ZVS, 5-kW, GaN-Based, Two-Phase Totem-Pole PFC Reference Design [10], for which Table 1 lists the primary components and system specifications.

GUID-20230803-SS0I-KFMG-3MMP-MFZ3FLM02XPB-low.svg Figure 1 iTCM topology with inductor and current envelopes.
Table 1 iTCM topology with inductor and current envelopes.
Parameters Value
AC input 90 V-264 V
Line frequency 50-60 Hz
DC output 400 V
Maximum power 5 kW
Holdup time at full load 20 ms
Lg, low-frequency inductor 140 µH
Lb, high-frequency inductor 14 µH
Cb, high-frequency blocking capacitor 1.5 µF
Total harmonic distortion (THD) OCP v3
Electromagnetic interference (EMI) European standard (EN) 55022 Class A
Operating frequency Variable, 75 kHz-1.2 MHz
Microcontroller TMS320F280049C [11]
High-frequency GaN field-effect transistors (FETs) (S11, S12, S22, S21) LMG3526R030 [12]
Low-frequency silicon FETs (S3, S4) IPT60R022S7XTMA1
Dimensions 38 mm ´ 65 mm ´ 263 mm
Power density 120 W/in3