1 Features

Member of the Texas Instruments
Widebus® family
High-bandwidth data path (up to 500 MHz⁽¹⁾)
5-V tolerant I/Os with device powered up or powered down
Low and flat ON-state resistance (r_on) characteristics over operating range
(r_on = 5 Ω typical)
Rail-to-rail switching on data I/O ports
- 0-V to 5-V switching with 3.3-V V_CC
- 0-V to 3.3-V switching with 2.5-V V_CC
Bidirectional data flow, with near-zero propagation delay
Low input or output capacitance minimizes loading and signal distortion
(C_io(OFF) = 4 pF typical)
Fast switching frequency (f_OE = 20 MHz maximum)
Data and control inputs provide undershoot clamp diodes
Low power consumption (I_CC = 1 mA typical)
V_CC operating range from 2.3 V to 3.6 V
Data I/Os support 0-V to 5-V signaling levels
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)
Control inputs can be driven by TTL or
5-V/3.3-V CMOS outputs
I_off supports partial-power-down mode operation
Latch-up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model
  (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports both digital and analog applications: PCI interface, differential signal interface, memory interleaving, bus isolation, low-distortion signal gating ⁽¹⁾

† EN is the internal enable signal applied to the switch.

Simplified Schematic, Each FET Switch (SW)

1. For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families.