Detalles del producto

Protocols Composite, RGB Configuration 2:1 SPDT Number of channels 4 Bandwidth (MHz) 300 Supply voltage (max) (V) 3.6 Supply voltage (min) (V) 3 Ron (typ) (mΩ) 5000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.6 Supply current (typ) (µA) 10 ESD HBM (typ) (kV) 2 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -80 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 10 CON (typ) (pF) 17 Off isolation (typ) (dB) -50 OFF-state leakage current (max) (µA) 1 Propagation delay time (µs) 0.0025 Ron (max) (mΩ) 10000 Turnoff time (disable) (max) (ns) 3.5 Turnon time (enable) (max) (ns) 6.5 VIH (min) (V) 2 VIL (max) (V) 0.8
Protocols Composite, RGB Configuration 2:1 SPDT Number of channels 4 Bandwidth (MHz) 300 Supply voltage (max) (V) 3.6 Supply voltage (min) (V) 3 Ron (typ) (mΩ) 5000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 3.6 Supply current (typ) (µA) 10 ESD HBM (typ) (kV) 2 Operating temperature range (°C) -40 to 85 Crosstalk (dB) -80 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 10 CON (typ) (pF) 17 Off isolation (typ) (dB) -50 OFF-state leakage current (max) (µA) 1 Propagation delay time (µs) 0.0025 Ron (max) (mΩ) 10000 Turnoff time (disable) (max) (ns) 3.5 Turnon time (enable) (max) (ns) 6.5 VIH (min) (V) 2 VIL (max) (V) 0.8
SOIC (D) 16 59.4 mm² 9.9 x 6 SSOP (DBQ) 16 29.4 mm² 4.9 x 6 TSSOP (PW) 16 32 mm² 5 x 6.4 TVSOP (DGV) 16 23.04 mm² 3.6 x 6.4 VQFN (RGY) 16 14 mm² 4 x 3.5
  • Low Differential Gain and Phase (DG = 0.82%, DP = 0.1 Degree Typ)
  • Wide Bandwidth (BW = 300 MHz Min)
  • Low Crosstalk (XTALK = -80 dB Typ)
  • Low Power Consumption (ICC = 10 µA Max)
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron = 3 Typ)
  • Rail-to-Rail Switching on Data I/O Ports (0 to VCC)
  • VCC Operating Range From 3 V to 3.6 V
  • Ioff Supports Partial-Power-Down Mode Operation
  • Data and Control Inputs Provide Undershoot Clamp Diode
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Suitable for Both RGB and Composite-Video Switching

  • Low Differential Gain and Phase (DG = 0.82%, DP = 0.1 Degree Typ)
  • Wide Bandwidth (BW = 300 MHz Min)
  • Low Crosstalk (XTALK = -80 dB Typ)
  • Low Power Consumption (ICC = 10 µA Max)
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron = 3 Typ)
  • Rail-to-Rail Switching on Data I/O Ports (0 to VCC)
  • VCC Operating Range From 3 V to 3.6 V
  • Ioff Supports Partial-Power-Down Mode Operation
  • Data and Control Inputs Provide Undershoot Clamp Diode
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Suitable for Both RGB and Composite-Video Switching

The TS3V330 video switch is a 4-bit 1-of-2 multiplexer/demultiplexer, with a single switch-enable (EN) input. When EN is low, the switch is enabled and the D port is connected to the S port. When EN is high, the switch is disabled and the high-impedance state exists between the D and S ports. The select (IN) input controls the data path of the multiplexer/demultiplexer.

Low differential gain and phase make this switch ideal for composite and RGB video applications. This device has wide bandwidth and low crosstalk, making it suitable for high-frequency applications as well.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. This switch maintains isolation during power off.

To ensure the high-impedance state during power up or power down, EN should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The TS3V330 video switch is a 4-bit 1-of-2 multiplexer/demultiplexer, with a single switch-enable (EN) input. When EN is low, the switch is enabled and the D port is connected to the S port. When EN is high, the switch is disabled and the high-impedance state exists between the D and S ports. The select (IN) input controls the data path of the multiplexer/demultiplexer.

Low differential gain and phase make this switch ideal for composite and RGB video applications. This device has wide bandwidth and low crosstalk, making it suitable for high-frequency applications as well.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. This switch maintains isolation during power off.

To ensure the high-impedance state during power up or power down, EN should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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Documentación técnica

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Tipo Título Fecha
* Data sheet TS3V330 datasheet (Rev. C) 11 jul 2005
Application note Preventing Excess Power Consumption on Analog Switches 03 jul 2008
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 jul 2004

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

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Esquema: PDF
Paquete Pasadores Descargar
SOIC (D) 16 Ver opciones
SSOP (DBQ) 16 Ver opciones
TSSOP (PW) 16 Ver opciones
TVSOP (DGV) 16 Ver opciones
VQFN (RGY) 16 Ver opciones

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

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