Inicio Lógica y traducción de voltaje Traductores de tensión y desplazadores de nivel Traductores de tensión de dirección automática
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Lógica y traducción de voltaje
Traductores de tensión y desplazadores de nivel
Traductores de tensión de dirección automática

TXB0108

ACTIVO

Conmutador de nivel de tensión bidireccional de 8 bits con detección de dirección automática y prote

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TXB0108

ACTIVO
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Detalles del producto

Technology family TXB Applications GPIO Bits (#) 8 Data rate (max) (Mbps) 100 High input voltage (min) (V) 0.78 High input voltage (max) (V) 5.5 Vout (min) (V) 1.2 Vout (max) (V) 5.5 IOH (max) (mA) -0.02 IOL (max) (mA) 0.02 Supply current (max) (µA) 10 Features Edge rate accelerator, Integrated pullup resistors, Output enable, Partial power down (Ioff), Vcc isolation Input type Standard CMOS Output type 3-State, CMOS, Push-Pull Rating Catalog Operating temperature range (°C) -40 to 85
Technology family TXB Applications GPIO Bits (#) 8 Data rate (max) (Mbps) 100 High input voltage (min) (V) 0.78 High input voltage (max) (V) 5.5 Vout (min) (V) 1.2 Vout (max) (V) 5.5 IOH (max) (mA) -0.02 IOL (max) (mA) 0.02 Supply current (max) (µA) 10 Features Edge rate accelerator, Integrated pullup resistors, Output enable, Partial power down (Ioff), Vcc isolation Input type Standard CMOS Output type 3-State, CMOS, Push-Pull Rating Catalog Operating temperature range (°C) -40 to 85
DSBGA (YZP) 20 6.1875 mm² 2.25 x 2.75 NFBGA (NME) 20 7.5 mm² 2.5 x 3 TSSOP (PW) 20 41.6 mm² 6.5 x 6.4 USON (DQS) 20 8 mm² 4 x 2 VQFN (RGY) 20 15.75 mm² 4.5 x 3.5
  • 1.2 V to 3.6 V on A Port and 1.65 V to 5.5 V on B Port (VCCA ≤ VCCB)
  • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State
  • OE Input Circuit Referenced to VCCA
  • Low Power Consumption, 4-µA Max ICC
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port
      • 2000-V Human-Body Model (A114-B)
      • 1000-V Charged-Device Model (C101)
    • B Port
      • ±15-kV Human-Body Model (A114-B)
      • ±8-kV Human-Body Model (A114-B) (YZP Package Only)
      • 1000-V Charged-Device Model (C101)
  • 1.2 V to 3.6 V on A Port and 1.65 V to 5.5 V on B Port (VCCA ≤ VCCB)
  • VCC Isolation Feature – If Either VCC Input Is at GND, All Outputs Are in the High-Impedance State
  • OE Input Circuit Referenced to VCCA
  • Low Power Consumption, 4-µA Max ICC
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • A Port
      • 2000-V Human-Body Model (A114-B)
      • 1000-V Charged-Device Model (C101)
    • B Port
      • ±15-kV Human-Body Model (A114-B)
      • ±8-kV Human-Body Model (A114-B) (YZP Package Only)
      • 1000-V Charged-Device Model (C101)

This 8-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. VCCA should not exceed VCCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXB0108 is designed so that the OE input circuit is supplied by VCCA.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power-up or power-down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

This 8-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2 V to 3.6 V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65 V to 5.5 V. This allows for universal low-voltage bidirectional translation between any of the 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes. VCCA should not exceed VCCB.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXB0108 is designed so that the OE input circuit is supplied by VCCA.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

To ensure the high-impedance state during power-up or power-down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
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Documentación técnica

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* Data sheet TXB0108 8-Bit Bidirectional Voltage-Level Translator with Auto-Direction Sensing and ±15-kV ESD Protection datasheet (Rev. H) PDF | HTML 25 ago 2020
Application note Understanding Transient Drive Strength vs. DC Drive Strength in CMOS Output Buffers PDF | HTML 14 may 2024
Application note Leveraging Edge Rate Accelerators with Auto-Sensing Level Shifters PDF | HTML 29 sep 2023
Application brief Future-Proofing Your Level Shifter Design with TI's Dual Footprint Packages PDF | HTML 05 sep 2023
Application note Do’s and Don’ts for TXB and TXS Voltage Level-Shifters with Edge Rate Accelerato PDF | HTML 28 jun 2023
Selection guide Voltage Translation Buying Guide (Rev. A) 15 abr 2021
Application note Effects of pullup and pulldown resistors on TXS and TXB devices (Rev. A) 28 mar 2018
Application note Factors Affecting VOL for TXS and LSF Auto-bidirectional Translation Devices 19 nov 2017
Application note Biasing Requirements for TXS, TXB, and LSF Auto-Bidirectional Translators 30 oct 2017
Application note A Guide to Voltage Translation With TXS-Type Translators 29 jun 2010
Application note A Guide to Voltage Translation With TXB-Type Translators 03 mar 2010

Diseño y desarrollo

Revise la sección Diseño y desarrollo en un equipo de escritorio.

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Soporte y capacitación

Foros de TI E2E™ con asistencia técnica de los ingenieros de TI

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