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UCC27512-EP

アクティブ

エンハンスド製品、5V UVLO搭載、SON パッケージ封止、4A/8A、シングルチャネル・ゲート・ドライバ

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データシート

UCC27512-EP

アクティブ
データシート ご注文はこちら

製品詳細

Operating temperature range (°C) -55 to 125 Rating HiRel Enhanced Product Input supply voltage (max) (V) 18 Input supply voltage (min) (V) 4.5 Number of channels 1
Operating temperature range (°C) -55 to 125 Rating HiRel Enhanced Product Input supply voltage (max) (V) 18 Input supply voltage (min) (V) 4.5 Number of channels 1
WSON (DRS) 6 9 mm² 3 x 3
  • Low-Cost, Gate-Driver Device Offering Superior Replacement
    of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive
  • Strong Sink Current Offers Enhanced Immunity Against Miller Turn On
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (ensures glitch free operation at
    power-up and power-down)
  • TTL and CMOS Compatible Input Logic Threshold,
    (independent of supply voltage)
  • Hysteretic Logic Thresholds for High Noise Immunity
  • Dual Input Design (choice of an inverting (IN- pin) or non-inverting
    (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin
    Bias Supply Voltage
  • 6-Pin DRS (3mm × 3 mm WSON with exposed thermal pad) Package

Supports Defense, Aerospace, and Medical Applications

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C) Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability
  • Low-Cost, Gate-Driver Device Offering Superior Replacement
    of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive
  • Strong Sink Current Offers Enhanced Immunity Against Miller Turn On
  • Fast Propagation Delays (13-ns typical)
  • Fast Rise and Fall Times (9-ns and 7-ns typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (ensures glitch free operation at
    power-up and power-down)
  • TTL and CMOS Compatible Input Logic Threshold,
    (independent of supply voltage)
  • Hysteretic Logic Thresholds for High Noise Immunity
  • Dual Input Design (choice of an inverting (IN- pin) or non-inverting
    (IN+ pin) driver configuration)
    • Unused Input Pin can be Used for Enable or Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin
    Bias Supply Voltage
  • 6-Pin DRS (3mm × 3 mm WSON with exposed thermal pad) Package

Supports Defense, Aerospace, and Medical Applications

  • Controlled Baseline
  • One Assembly and Test Site
  • One Fabrication Site
  • Available in Military (–55°C to 125°C) Temperature Range
  • Extended Product Life Cycle
  • Extended Product-Change Notification
  • Product Traceability

The UCC27512 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27512 is capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turn-on effect.

UCC27512 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of –55°C to 125°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.

The UCC27512 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27512 is capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.

The UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turn-on effect.

UCC27512 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of –55°C to 125°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.
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種類 タイトル 最新の英語版をダウンロード 日付
* データシート Single Channel High-Speed, Low-Side Gate Driver (With 4-A/8-A Peak Source/Sink). データシート 2013年 6月 10日
* 放射線と信頼性レポート UCC27512MDRSTEP Reliability Report 2016年 2月 9日
アプリケーション概要 External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
アプリケーション概要 Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日

設計と開発

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WSON (DRS) 6 オプションの表示
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購入と品質

記載されている情報：
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  • REACH
  • デバイスのマーキング
  • リード端子の仕上げ / ボールの原材料
  • MSL 定格 / ピーク リフロー
  • MTBF/FIT 推定値
  • 材質成分
  • 認定試験結果
  • 継続的な信頼性モニタ試験結果
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