TPS51116 Memory Power Solution, Synchronous Buck Controller Evaluation Module

(ACTIVE) TPS51116EVM-001

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The TPS51116EVM evaluation module (EVM) is a dual-output converter for DDR and DDRII memory modules. It uses a 10 A synchronous buck converter to provide the core voltage (VDDQ) for DDR memory modules. The EVM is designed to use a 4.5 V to 28 V supply voltage and a 4.75 V to 5.25 V controller bias supply. This allows the EVM to start up from a single 5 V supply or operate from a wide range of supply voltages with low power 5 V bias supply. The TPS51116EVM provides several jumpers and switches to allow the user to evaluate all of the TPS51116's configurations including lossless RDS(on) or resistive current sensing, current mode or D-CAP™ semi-hysteretic operation, DDR or DDRII voltage standards and the S3 and S5 sleep states.

  • Up to 85% efficiency on the VDDQ switching regulator output
  • Dual switching regulator / LDO output for both DDR core and termination voltages
  • ± 3 A sink/source termination voltage LDO regulator
  • 10 mA termination reference voltage for DDR input reference
  • User selectable DDR and DDRII or externally referenced supply voltages
  • User selectable switching regulator or external supply source for LDO termination regulator
  • Switches available for testing S3 and S5 sleep states

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TPS51116EVM-001 Evaluation Module


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Technical Documents
Datasheet (1)
Title Abstract Type Size (KB) Date Views
PDF 2958 16 Nov 2017
User guides (1)
Title Abstract Type Size (KB) Date Views TI Recommends
PDF 521 12 Nov 2008 24

TI Devices (6)

Part Number Name Product Family
CSD17307Q5A  30V N Channel NexFET™ Power MOSFET  MOSFETs 
CSD17505Q5A  30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs   MOSFETs 
TPS51020  Dual, DDR selectable, Synchronous buck controller  Power management 
TPS51100  3A Source/Sink DDR terminator Regulator  Power management 
TPS51116  DDR1, DDR2, DDR3 Switcher and LDO  Power management 
TPS51116-EP  Enhanced Product DDR1, DDR2, DDR3 Switcher and LDO  Power management 

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