Achieve extended battery range, increased system reliability and lower design cost with the fully integrated automotive GaN FETs, reducing the size of electric vehicle (EV) onboard chargers and DC/DC converters by as much as 50% compared to existing Si or SiC solutions. The integration of the FET and gate driver enables a switching speed of greater than 150 V/ns, lowering losses by 66% over discrete GaN FETs.