Gallium nitride (GaN) power stages

Maximize power density and efficiency with our portfolio of GaN power devices for every power level

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Our family of gallium nitride (GaN) FETs with integrated gate drivers and GaN power devices offers the most efficient GaN solution with lifetime reliability and cost advantages. GaN transistors switch much faster than silicon MOSFETs, offering the potential to achieve lower-switching losses. Our GaN power stages can be used in a wide range of applications, from telecommunications, servers, motor drives and laptop adapters to on-board chargers for electric vehicles.

Find your GaN power stage

Advantages of TI GaN technology

Faster switching speed than discrete GaN FETs

Our GaN FETs with integrated drivers can reach switching speeds of 150 V/ns. These switching speed, combined with a low-inductance package, reduce losses, enable clean switching and minimize ringing.

Smaller magnetics, higher power density

Enabled by faster switching speeds, our GaN devices can help you achieve switching frequencies over 500 kHz, which results in up to 60% smaller magnetics, enhanced performance and lower system cost.

Built for reliability

Our GaN devices are designed to keep high-voltage systems safe thanks to a proprietary GaN-on-Si process, more than 80 million hours of reliability testing and protection features.

Dedicated design tools and resources

Shorten your time to market with our GaN design resources, including power loss calculators, PLECS models for circuit simulation and evaluation boards for testing and operation in larger systems.

Why choose GaN

GaN overview

Understanding GaN technology

GaN offers higher power density, more reliable operation and improved efficiency over traditional silicon-only based solutions. Head to our technology page to learn more about GaN as a power transistor technology, discover featured GaN applications, hear from our customers and see for yourself how our GaN products can help you minimize the weight, size and cost of your next power design.

GaN design resources and models

Tools and resources to assist with your design

We offer numerous resources to assist with your design and help you choose the right device for your application. Our power loss calculation tools can help you with product selection by showing power losses for selected devices at user-specified parameters. Our PLECS models allow you to simulate the operation of GaN devices to estimate the FET junction temperature and allow for an adjustable slew-rate during turn-on. Our half-bridge evaluation daughter cards are also available for testing and operation in larger systems.

Technical resources

Application note

Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage (Rev. A)

Thermal management can make-or-break a high power design. Our QFN 12 x 12 package is designed for great performance across applications. Learn more about the package and read tips on how to optimize your thermal design.

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White paper

Direct-drive configuration for GaN devices (Rev. A)

Our family of dMode GaN devices allows for normally off operation without being cascode. Learn more about direct drive architecture and its benefits.

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Application note

Third quadrant operation of GaN

Learn more about GaN's operation in the third quadrant and what you need to know to minimize deadtime losses.

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Design & development resources

Reference design

11-kW, bidirectional, three-phase ANPC based on GaN reference design

This reference design provides a design template for implementing a three-level, three-phase, gallium nitride (GaN) based ANPC inverter power stage. The use of fast switching power devices makes it possible to switch at a higher frequency of 100 kHz, reducing the size of magnetics for the filter (...)

Reference design

4-kW single-phase totem pole PFC reference design with C2000 and GaN

This reference design is a 4-kW CCM totem-pole PFC with F280049/F280025 control card and LMG342x EVM board. This design demos a robust PFC solution, which avoids isolated current sense by putting the controller's ground in the middle of a MOSFET leg. Benefitting from non-isolation, AC current (...)

Reference design

GaN-based, 6.6-kW, bidirectional, onboard charger reference design

The PMP22650 reference design is a 6.6-kW, bidirectional, onboard charger. The design employs a two-phase totem pole PFC and a full-bridge CLLLC converter with synchronous rectification. The CLLLC utilizes both frequency and phase modulation to regulate the output across the required regulation (...)