SWRS347 September   2026 AWRL6888

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
    1. 5.1 Related Products
  7. 6 Terminal Configurations and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Signal Descriptions
      1.      11
      2.      12
      3.      13
      4.      14
      5.      15
      6.      16
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      8.      18
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      11.      21
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      18.      28
    3.     29
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Power-On Hours (POH)
    4. 7.4  Recommended Operating Conditions
    5. 7.5  VPP Specifications for One-Time Programmable (OTP) eFuses
      1. 7.5.1 Recommended Operating Conditions for OTP eFuse Programming
      2. 7.5.2 Hardware Requirements
      3. 7.5.3 Impact to Your Hardware Warranty
    6. 7.6  Power Supply Specifications
      1. 7.6.1 3.3V I/O Topology
      2. 7.6.2 1.8V I/O Topology
      3. 7.6.3 System Topologies
        1. 7.6.3.1 I/O Topologies
      4. 7.6.4 RF Supply Decoupling Capacitor and Layout Conditions
        1. 7.6.4.1 1.2V RF Supply Rail
          1. 7.6.4.1.1 1.2V RF Rail
        2. 7.6.4.2 1.0V RF LDO
          1. 7.6.4.2.1 1.0V RF LDO
      5. 7.6.5 Noise and Ripple Specifications
    7. 7.7  Power Save Modes
      1. 7.7.1 Typical Power Consumption Numbers
    8. 7.8  Peak Current Requirement per Voltage Rail
    9. 7.9  RF Specification
    10. 7.10 Supported DFE Features
    11. 7.11 CPU Specifications
    12. 7.12 Thermal Resistance Characteristics
    13. 7.13 Timing and Switching Characteristics
      1. 7.13.1  Power Supply Sequencing and Reset Timing
      2. 7.13.2  Synchronized Frame Triggering
      3. 7.13.3  Input Clocks and Oscillators
        1. 7.13.3.1 Clock Specifications
      4. 7.13.4  MultiChannel buffered / Standard Serial Peripheral Interface (McSPI)
        1. 7.13.4.1 McSPI Features
        2. 7.13.4.2 SPI Timing Conditions
        3. 7.13.4.3 SPI—Controller Mode
          1. 7.13.4.3.1 Timing and Switching Requirements for SPI - Controller Mode
          2. 7.13.4.3.2 Timing and Switching Characteristics for SPI Output Timings—Controller Mode
        4. 7.13.4.4 SPI—Peripheral Mode
          1. 7.13.4.4.1 Timing and Switching Requirements for SPI - Peripheral Mode
          2. 7.13.4.4.2 Timing and Switching Characteristics for SPI Output Timings—Secondary Mode
      5. 7.13.5  LVDS Instrumentation and Measurement Peripheral
        1. 7.13.5.1 LVDS Interface Configuration
        2. 7.13.5.2 LVDS Interface Timings
      6. 7.13.6  LIN
      7. 7.13.7  General-Purpose Input/Output
        1. 7.13.7.1 Switching Characteristics for Output Timing versus Load Capacitance (CL)
      8. 7.13.8  Controller Area Network - Flexible Data-rate (CAN-FD)
        1. 7.13.8.1 Dynamic Characteristics for the CANx TX and RX Pins
      9. 7.13.9  Serial Communication Interface (SCI)
        1. 7.13.9.1 SCI Timing Requirements
      10. 7.13.10 Inter-Integrated Circuit Interface (I2C)
        1. 7.13.10.1 I2C Timing Requirements
      11. 7.13.11 Quad Serial Peripheral Interface (QSPI)
        1. 7.13.11.1 QSPI Timing Conditions
        2. 7.13.11.2 Timing Requirements for QSPI Input (Read) Timings
        3. 7.13.11.3 QSPI Switching Characteristics
      12. 7.13.12 JTAG Interface
        1. 7.13.12.1 JTAG Timing Conditions
        2. 7.13.12.2 Timing Requirements for IEEE 1149.1 JTAG
        3. 7.13.12.3 Switching Characteristics Over Recommended Operating Conditions for IEEE 1149.1 JTAG
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Subsystems
      1. 8.3.1  RF and Analog Subsystem
      2. 8.3.2  Clock Subsystem
      3. 8.3.3  Transmit Subsystem
      4. 8.3.4  Receive Subsystem
      5. 8.3.5  Processor Subsystem
      6. 8.3.6  Automotive Interface
      7. 8.3.7  Host Interface
      8. 8.3.8  Application Subsystem Cortex-R5F
      9. 8.3.9  DSP Subsystem
      10. 8.3.10 Hardware Accelerator (HWA1.2) Features
        1. 8.3.10.1 Hardware Accelerator Feature Differences Between HWA1.1 in xWRx843, HWA1.2 in xWRLx432 and HWA1.2 in xWRL684x & AWRL6888
    4. 8.4 Other Subsystems
      1. 8.4.1 Security – Hardware Security Module
      2. 8.4.2 GPADC Channels (Service) for User Application
      3. 8.4.3 GPADC Parameters
      4. 8.4.4 Memory Partitioning Options
      5. 8.4.5 Boot Modes
  10. 9 Monitoring and Diagnostics
  11. 10Applications, Implementation, and Layout
    1. 10.1 Application Information
    2. 10.2 Reference Schematic
  12. 11Device and Documentation Support
    1. 11.1 Device Nomenclature
    2. 11.2 Tools and Software
    3. 11.3 Documentation Support
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
  • APD|329
Thermal pad, mechanical data (Package|Pins)

7.6.4.2 1.0V RF LDO

1.0V RF LDO require two decoupling capacitors with typical values of 10uF and 22uF.


AWRL6888 Parasitic offered by different portion of the output path for two capacitors

Figure 7-5 Parasitic offered by different portion of the output path for two capacitors

The parasitic offered by different portion of the output path is illustrated in Figure 7-5. As shown in figure, the output path can be divided into four portions:

Ball to first capacitor: “RT1” and “LT1” are the parasitic resistance and inductance offered by the ball to the first capacitor lead.

Along the first capacitor: “ESL1” and “ESR1” are the effective series inductance and resistance of the first decoupling capacitor. “RT2” and “LT2” are the ground trace resistance and inductance respectively of the first capacitor ground trace.

First capacitor lead to second capacitor lead: “RTC2C” and “LTC2C” are the resistance and inductance of the trace between two capacitors.

Along the second capacitor: “ESL2” and “ESR2” are the effective series inductance and resistance of the second decoupling capacitor. “RT2” and “LT2” are the ground trace resistance and inductance respectively of the second capacitor ground trace.

F8, F9 and F10 BGA balls to M7 BGA ball “RT3” and “LT3” are the parasitic resistance and inductance offered from F8,F9 and F10 BGA balls to M7 BGA ball.

Note:

Recommended to avoid placing any capacitors on M7 ball.

Both the capacitors (22uF and 10uF) are recommended to be placed close to the respective VDDA_10RF BGA ball.

Place the output decoupling capacitors of 1.0V RF LDO on the same layer of PCB (either on top or on the bottom layer of PCB).