SLIS160D August   2014  – March 2017 BQ24392-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Charger Detection
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Using the BQ24392-Q1 GPIOs
        1. 8.1.1.1 CHG_AL and CHG_DET
        2. 8.1.1.2 SW_OPEN
        3. 8.1.1.3 GOOD_BAT
        4. 8.1.1.4 Slow Plug-in Event
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over –40℃ to 125℃ temperature range (unless otherwise noted)
MIN MAX UNIT
Input Voltage VBUS –2 28 V
CHG_AL_N –2 28
DM_HOST –0.3 7
DP_HOST –0.3 7
GOOD_BAT –0.3 7
DP_CON –0.3 7
DM_CON –0.3 7
CHG_DET –0.3 7
Tstg Storage temperature range –65 150 °C

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) ±4000 V
Charged device model (CDM), per AEC Q100-011 Corner pins (DP_CON and DM_CON to GND) ±8000
Other pins ±1500
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

MIN MAX UNIT
VBUS 4.75 5.25 V
GOOD_BAT 0 VBUS
DM_HOST 0 3.6
DP_HOST 0 3.6
DM_CON 0 3.6
DP_CON 0 3.6

6.4 Thermal Information

THERMAL METRIC(1) BQ24392-Q1 UNIT
RSE
10 PINS
RθJA Junction-to-ambient thermal resistance 167.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 78.8 °C/W
RθJB Junction-to-board thermal resistance 95.8 °C/W
ψJT Junction-to-top characterization parameter 4.7 °C/W
ψJB Junction-to-board characterization parameter 95.9 v
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

VBUS = 4.5 V to 5.5 V, TA = –40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VBUS_VALID VBUS Valid threshold Rising VBUS threshold 3.5 V
VOH CHG_DET CHG_DET IOH = –2 mA 3.5 VBUS(1) V
VOL CHG_DET, SW_OPEN, CHG_AL_N CHG_DET, SW_OPEN, CHG_AL_N IOL = 2 mA 0.4 V
VIH High-level input voltage GOOD_BAT 1.1 V
VIL Low-level input voltage 0.5 V
RPD Internal pull-down resistance 950 kΩ
tDBP Dead battery provision timer 32 45 Mins
VUSBIO Analog signal range DM_CON, DP_CON, DM_HOST, DP_HOST 0 3.6 V
RON ON-state resistance VDM_HOST and VDP_HOST = 0 to 3.6 V, IDP_CON and IDM_CON = –2 mA 6 8 Ω
RON(flat) ON-state resistance flatness 1.1 2.4 Ω
ΔRON ON- state resistance match between channels VDM_HOST and VDP_HOST = 0.4 V, IDP_CON and IDM_CON = –2 mA 0.5 Ω
ICC-SW (ON) Current consumption VVBUS = 5 V, USB Switch ON;
VIH(GOOD_BAT)= 1.1 V		 250 350 µA
VVBUS = 5 V, USB Switch ON;
VIH(GOOD_BAT) = 2.5 V 		80 115 µA
ICC-SW (OFF) Current consumption with USB switch off VVBUS = 5 V; USB Switch OFF 45 75 µA
IUSBI/O (ON) Output port leakage current with USB switch on VI = OPEN, VO = 0.3 V or 2.7 V, Switch ON 50 90 nA
IUSBI/O (OFF) Leakage current with USB switch off VI = 0.3 V, VO = 2.7 V or VI = 2.7 V, VO = 0.3 V, Switch OFF 45 75 nA
CI(OFF) Capacitance with USB switch off DP_HOST, DM_HOST DC bias = 0 V or 3.6 V, f = 10 MHz, Switch OFF 2 pF
CO(OFF) Capacitance with USB switch off DP_CON, DM_CON 10 pF
CI(ON) Capacitance with USB switch on DP_HOST, DM_HOST DC bias = 0 V or 3.6 V, f = 10 MHz, Switch ON 11 pF
CO(ON) Capacitance with USB switch on DP_CON, DM_CON 11 pF
BW Bandwidth RL = 50 Ω, Switch ON 1 GHz
OISO Isolation with USB switch off f = 240 MHz, RL = 50 Ω, Switch OFF –26 dB
XTALK Crosstalk f = 240 MHz, RL = 50 Ω –30.5 dB
(1) CHG_DET max value will be clamped at 7 V when VVBUS > 7 V

6.6 Typical Characteristics

BQ24392-Q1 eye1_lis146.gif
Figure 1. 480-Mbps USB 2.0 Eye Diagram with No Device
BQ24392-Q1 eye2_lis146.gif
Figure 2. 480-Mbps USB 2.0 Eye Diagram with USB Switch