SLUSBD1B MARCH   2013  – September 2016

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Pin Configuration and Function
  5. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 SMBus Timing Characteristics
    8. 5.8 Typical Characteristics
  6. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Switching Frequency Adjust
      2. 6.3.2  High Accuracy Current Sense Amplifiers
      3. 6.3.3  Charger Timeout
      4. 6.3.4  Input Over-Current Protection (ACOC)
      5. 6.3.5  Converter Over-Current Protection
      6. 6.3.6  Battery Over-Voltage Protection (BATOVP)
      7. 6.3.7  System Over-Voltage Protection (SYSOVP)
      8. 6.3.8  Thermal Shutdown Protection (TSHUT)
      9. 6.3.9  Adapter Over-Voltage Protection (ACOVP)
      10. 6.3.10 Adapter Detect and ACOK Output
      11. 6.3.11 ACFET/RBFET Control
      12. 6.3.12 DPM
      13. 6.3.13 Buck Converter Power up
    4. 6.4 Device Functional Modes
      1. 6.4.1 LDO Mode and Minimum System Voltage
      2. 6.4.2 PWM Mode Converter Operation
      3. 6.4.3 Continuous Conduction Mode (CCM)
      4. 6.4.4 Discontinuous Conduction Mode (DCM)
      5. 6.4.5 PFM Mode
      6. 6.4.6 Learn Mode
      7. 6.4.7 IDPM Disable at Battery Removal
    5. 6.5 Programming
      1. 6.5.1 SMBus Communication
        1. 6.5.1.1 SMBus Interface
          1. 6.5.1.1.1 Write-Word Format
          2. 6.5.1.1.2 Read-Word Format
        2. 6.5.1.2 SMBus Commands
        3. 6.5.1.3 Setting Charger Options
        4. 6.5.1.4 Setting the Charge Current
        5. 6.5.1.5 Setting the Max Charge Voltage
        6. 6.5.1.6 Setting the Minimum System Voltage
        7. 6.5.1.7 Setting Input Current
  7. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Inductor Selection
        2. 7.2.2.2 Input Capacitor
        3. 7.2.2.3 Output Capacitor
        4. 7.2.2.4 Power MOSFETs Selection
        5. 7.2.2.5 Input Filter Design
      3. 7.2.3 Application Curves
  8. Power Supply Recommendations
  9. Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Community Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9 Layout

9.1 Layout Guidelines

The switching node rise and fall times should be minimized for minimum switching loss. Proper layout of the components to minimize high frequency current path loop (see Figure 20) is important to prevent electrical and magnetic field radiation and high frequency resonant problems. Here is a PCB layout priority list for proper layout. Layout PCB according to this specific order is essential.

  1. Place input capacitor as close as possible to switching MOSFET’s supply and ground connections and use shortest copper trace connection. These parts should be placed on the same layer of PCB instead of on different layers and using vias to make this connection.
  2. The IC should be placed close to the switching MOSFET’s gate terminals and keep the gate drive signal traces short for a clean MOSFET drive. The IC can be placed on the other side of the PCB of switching MOSFETs.
  3. Place inductor input terminal to switching MOSFET’s output terminal as close as possible. Minimize the copper area of this trace to lower electrical and magnetic field radiation but make the trace wide enough to carry the charging current. Do not use multiple layers in parallel for this connection. Minimize parasitic capacitance from this area to any other trace or plane.
  4. The charging current sensing resistor should be placed right next to the inductor output. Route the sense leads connected across the sensing resistor back to the IC in same layer, close to each other (minimize loop area) and do not route the sense leads through a high-current path (see Figure 21 for Kelvin connection for best current accuracy). Place decoupling capacitor on these traces next to the IC.
  5. Place output capacitor next to the sensing resistor output and ground.
  6. Output capacitor ground connections need to be tied to the same copper that connects to the input capacitor ground before connecting to system ground.
  7. Use single ground connection to tie charger power ground to charger analog ground. Just beneath the IC use analog ground copper pour but avoid power pins to reduce inductive and capacitive noise coupling.
  8. Route analog ground separately from power ground. Connect analog ground and connect power ground separately. Connect analog ground and power ground together using power pad as the single ground connection point. Or using a 0Ω resistor to tie analog ground to power ground (power pad should tie to analog ground in this case if possible).
  9. Decoupling capacitors should be placed next to the IC pins and make trace connection as short as possible.
  10. It is critical that the exposed power pad on the backside of the IC package be soldered to the PCB ground. Ensure that there are sufficient thermal vias directly under the IC, connecting to the ground plane on the other layers.
  11. The via size and number should be enough for a given current path.

See the EVM design for the recommended component placement with trace and via locations. For the QFN information, see SCBA017 and SLUA271.

9.2 Layout Example

bq24715 high_freq_current_lusbd1.gif Figure 20. High Frequency Current Path
bq24715 sens_resistor_pcb_lusbd1.gif Figure 21. Sensing Resistor PCB Layout