SLUSCJ4B June 2017 – March 2022 BQ25600 , BQ25600D
PRODUCTION DATA

| fSW = 1.5 MHz | inductor DCR = 18 mΩ |
| VBAT=3.8V |

| IOTG = 1.2 A | VOTG = 5.15 V |
| VVBAT = 3.8 V |
Figure 7-5 SYSMIN Voltage vs. Junction Temperature
Figure 7-7 Input Current Limit vs. Junction Temperature
Figure 7-9 Charge Current vs. Junction Temperature Under Thermal Regulation
| VOTG = 5.15 V | inductor DCR = 18 mΩ |
Figure 7-4 Charge Current Accuracy
Figure 7-6 BATREG Charge Voltage vs. Junction Temperature
Figure 7-8 Charge Current vs. Junction Temperature