SLUSAX0E December   2012  – April 2021 BQ7716

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Sense Positive Input for Vx
      2. 8.3.2 Output Drive, OUT
      3. 8.3.3 Supply Input, VDD
      4. 8.3.4 External Delay Capacitor, CD
    4. 8.4 Device Functional Modes
      1. 8.4.1 NORMAL Mode
      2. 8.4.2 OVERVOLTAGE Mode
      3. 8.4.3 Customer Test Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Export Control Notice
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Application Information

Figure 9-1 shows each external component.

GUID-8972C5A9-E41F-4CE8-8758-D85CC0692BF5-low.gifFigure 9-1 Application Configuration
Note:

In the case of an Open Drain Active Low configuration, an external pull-up resistor is required on the OUT terminal.

Changes to the ranges stated in Table 9-1 will impact the accuracy of the cell measurements.

Note:

The device is calibrated using an RIN value = 1 kΩ. Using a value other than this recommended value changes the accuracy of the cell voltage measurements and VOV trigger level.