SCHS382A January   2010  – August 2022 CD74HC366-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Description
  3. 3 Revision History
  4. 4 Pin Configuration and Functions
  5. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
  6. 6 Parameter Measurement Information
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Functional Modes
  8. 8 Power Supply Recommendations
  9. 9 Layout
    1. 9.1 Layout Guidelines
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

2 Description

The CD74HC365-Q1, CD74HC366-Q1, and CD74HCT365-Q1 silicon gate CMOS three state buffers are general purpose high-speed non-inverting and inverting buffers. They have high drive current outputs which enable high speed operation even when driving large bus capacitances. These circuits possess the low power dissipation of CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable of driving up to 15 low power Schottky inputs.

Device Information
PART NUMBER PACKAGE(1) BODY SIZE (NOM)
CD74HC366QDRQ1 D (SOIC, 16) 9.90 mm × 3.90 mm
(1) For all available packages, see the orderable addendum at the end of the data sheet.
GUID-C4E5AF10-EF2D-4B2D-AEAC-DF25252F8237-low.gif Functional Block Diagram