SLPS313A September   2013  – January 2018 CSD13202Q2

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Device Images
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Characteristics
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q2 Package Dimensions
      1. 7.1.1 Recommended PCB Pattern
      2. 7.1.2 Recommended Stencil Pattern
    2. 7.2 Q2 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQK|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Electrical Characteristics

TA = 25°C, unless otherwise specified
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 12 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 9.6 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 8 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 μA 0.58 0.80 1.10 V
RDS(on) Drain-to-source on-resistance VGS = 2.5 V, IDS = 5 A 9.1 11.6 mΩ
VGS = 3 V, IDS = 5 A 8.4 10.4
VGS = 4.5 V, IDS = 5 A 7.5 9.3
gfs Transconductance VDS = 6 V, IDS = 5 A 44 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0V, VDS = 6 V, f = 1 MHz 767 997 pF
COSS Output capacitance 506 657 pF
CRSS Reverse transfer capacitance 43 56 pF
Rg Series gate resistance 0.7 1.4 Ω
Qg Gate charge total (4.5 V) VDS = 6 V, IDS = 5 A 5.1 6.6 nC
Qgd Gate charge gate-to-drain 0.76 nC
Qgs Gate charge gate-to-source 0.98 nC
Qg(th) Gate charge at Vth 0.57 nC
QOSS Output charge VDS = 6 V, VGS = 0 V 5.7 nC
td(on) Turnon delay time VDS = 6 V, VGS = 4.5 V, IDS = 5 A
RG = 2 Ω		 4.5 ns
tr Rise time 28 ns
td(off) Turnoff delay time 11.0 ns
tf Fall time 13.6 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IDS = 5 A, VGS = 0 V 0.75 1 V
Qrr Reverse recovery charge VDD = 6 V, IF = 5 A, di/dt = 200 A/μs 13 nC
trr Reverse recovery time 28 ns