SLPS537 March   2015 CSD13306W

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD13306W Package Dimensions
    2. 7.2 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZC|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 12 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 9.6 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 10 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 0.7 1.0 1.3 V
RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V, ID = 1.5 A 12.9 15.5 mΩ
VGS = 4.5 V, ID = 1.5 A 8.8 10.2 mΩ
gƒs Transconductance VDS = 1.2 V, ID =1.5 A 15 S
DYNAMIC CHARACTERISTICS
CISS Input Capacitance VGS = 0 V, VDS = 6 V, ƒ = 1 MHz 1050 1370 pF
COSS Output Capacitance 324 421 pF
CRSS Reverse Transfer Capacitance 226 294 pF
Rg 4.2 8.4 Ω
Qg Gate Charge Total (4.5V) VDS = 6 V, ID = 1.5 A 8.6 11.2 nC
Qgd Gate Charge Gate-to-Drain 3.0 nC
Qgs Gate Charge Gate-to-Source 1.1 nC
Qg(th) Gate Charge at Vth 1.2 nC
QOSS Output Charge VDS = 6 V, VGS = 0 V 3.3 nC
td(on) Turn On Delay Time VDS = 6 V, VGS = 4.5 V, ID = 1.5 A
RG = 4 Ω		 7 ns
tr Rise Time 11 ns
td(off) Turn Off Delay Time 20 ns
tƒ Fall Time 8 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage IS = 1.5 A, VGS = 0 V 0.7 1.0 V
Qrr Reverse Recovery Charge VDS= 6 V, IF = 1.5 A, di/dt = 200 A/μs 14.8 nC
trr Reverse Recovery Time 23 ns

5.2 Thermal Information

TA = 25°C unless otherwise stated
THERMAL METRIC MIN TYP MAX UNIT
RθJA Junction-to-Ambient Thermal Resistance (1) 230 °C/W
Junction-to-Ambient Thermal Resistance (2) 65
(1) Device mounted on FR4 material with minimum Cu mounting area
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
CSD13306W Layout_MAX_58874.png
 Typ RθJA = 65°C/W when mounted on
1 inch2 of 2 oz. Cu.
CSD13306W Layout_Min_58874.png
 Typ RθJA = 230°C/W when mounted on minimum pad area of
2 oz. Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD13306W D001_SLPS536.png
Figure 1. Transient Thermal Impedance
CSD13306W D002_SLPS536.gif
Figure 2. Saturation Characteristics
CSD13306W D004_SLPS536.gif
ID = 1.5 A VDS = 6 V
Figure 4. Gate Charge
CSD13306W D006_SLPS536.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD13306W D008_SLPS536.gif
ID = 1.5 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD13306W D010_SLPS536.gif
Single Pulse, Max RθJA = 230°C/W
Figure 10. Maximum Safe Operating Area
CSD13306W D003_SLPS536.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD13306W D005_SLPS536.gif
Figure 5. Capacitance
CSD13306W D007_SLPS536_r2.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD13306W D009_SLPS536.gif
Figure 9. Typical Diode Forward Voltage
CSD13306W D012_SLPS536.gif
Figure 11. Maximum Drain Current vs Temperature