SLPS579B May   2016  – February 2022 CSD15380F3

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA 20 V
IDSS Drain-to-Source leakage current VGS = 0 V, VDS = 16 V 50 nA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 10 V 25 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 2.5 μA 0.85 1.10 1.35 V
RDS(on) Drain-to-source on-resistance VGS = 2.5 V, IDS = 0.1 A 2220 4000 mΩ
VGS = 4.5 V, IDS = 0.1 A 1170 1460
VGS = 8 V, IDS = 0.1 A 990 1190
gfs Transconductance VDS = 2 V, IDS = 0.1 A 0.64 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 10 V,
ƒ = 1 MHz		 8.1 10.5 pF
Coss Output capacitance 5.9 7.7 pF
Crss Reverse transfer capacitance 0.13 0.17 pF
RG Series gate resistance 9.6 Ω
Qg Gate charge total (4.5 V) VDS = 10 V, IDS = 0.1 A 0.216 0.281 nC
Qgd Gate charge gate-to-drain 0.027 nC
Qgs Gate charge gate-to-source 0.077 nC
Qg(th) Gate charge at Vth 0.048 nC
td(on) Turnon delay time VDS = 10 V, VGS = 4.5 V,
IDS = 0.1 A, RG = 0 Ω		 3 ns
tr Rise time 1 ns
td(off) Turnoff delay time 7 ns
tf Fall time 7 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 0.1 A, VGS = 0 V 0.85 1 V