SLPS228B October 2009 – October 2023 CSD16408Q5
PRODUCTION DATA
- 1
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Electrical Characteristics
- 6Thermal Characteristics
- 7Typical MOSFET Characteristics
- 8Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
- DQH|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information
3 Description
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top ViewProduct Summary
| VDS | Drain-to-source voltage | 25 | V | ||
| Qg | Gate charge, total (4.5 V) | 6.7 | nC | ||
| Qgd | Gate charge, gate-to-drain | 1.9 | nC | ||
| rDS(on) | Drain-to-source on-resistance | VGS = 4.5 V | 5.4 | mΩ | |
| VGS = 10 V | 3.6 | mΩ | |||
| VGS(th) | Threshold voltage | 1.8 | V | ||
Ordering Information
| Device | Package | Media | Qty | Ship |
|---|---|---|---|---|
| CSD16408Q5 | SON 5-mm × 6-mm plastic package | 13-inch (33-cm) reel | 2500 | Tape and reel |
ABSOLUTE MAXIMUM RATINGS
| TA = 25°C unless otherwise stated | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-source voltage | 25 | V |
| VGS | Gate-to-source voltage | –12 to 16 | V |
| ID | Continuous drain current, TC = 25°C | 113 | A |
| Continuous drain current(1) | 22 | A | |
| IDM | Pulsed drain current, TA = 25°C(2) | 141 | A |
| PD | Power dissipation(1) | 3.1 | W |
| TJ, TSTG | Operating junction and storage temperature range | –55 to 150 | °C |
| EAS | Avalanche energy, single-pulse ID = 23 A, L = 0.1 mH, RG = 25 Ω | 126 | mJ |
(1) Typical RθJA = 41°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300 μs, duty cycle ≤2%
RDS(on) vs VGS
GATE CHARGE