SLPS206B August   2009  – November 2016 CSD16411Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQG|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 25 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 20 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = +16 / –12 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.7 2 2.3 V
RDS(on) Drain-to-source on resistance VGS = 4.5 V, ID = 10 A 12 15 mΩ
VGS = 10 V, ID = 10 A 8 10
gfs Transconductance VDS = 15 V, ID = 10 A 30 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 12.5 V, f = 1 MHz 440 570 pF
COSS Output capacitance 330 430 pF
CRSS Reverse transfer capacitance 33 43 pF
Rg Series gate resistance 0.8 1.6 Ω
Qg Gate charge total (4.5 V) VDS = 12.5 V, ID = 10 A 2.9 3.8 nC
Qgd Gate charge gate-to-drain 0.7 nC
Qgs Gate charge gate-to-source 1.5 nC
Qg(th) Gate charge at Vth 0.9 nC
QOSS Output charge VDS = 12.5 V, VGS = 0 V 6.5 nC
td(on) Turnon delay time VDS = 12.5 V, VGS = 4.5 V, ID = 10 A
RG = 2 Ω		 5.3 ns
tr Rise time 7.8 ns
td(off) Turnoff delay time 6 ns
tf Fall time 3.1 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IS = 10 A, VGS = 0 V 0.85 1 V
Qrr Reverse recovery charge VDD = 12.5 V, IF = 10 A, di/dt = 300 A/μs 11.7 nC
trr Reverse recovery time VDD = 12.5 V, IF = 10 A, di/dt = 300 A/μs 15.5 ns

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
PARAMETER MIN TYP MAX UNIT
R θJC Junction-to-case thermal resistance(1) 3.5 °C/W
R θJA Junction-to-ambient thermal resistance(1) (2) 55 °C/W
(1) RθJC is determined with the device mounted on a 1-in2 2-oz Cu pad on a 1.5-in × 1.5-in 0.06-in thick FR4 board. RθJC is specified by design while RθJA is determined by the user’s board design.
(2) Device mounted on FR4 Material with 1-in2 of 2-oz Cu.
CSD16411Q3 m0161-01_lps202.gif
Max RθJA = 55°C/W when mounted on 1-in2 of 2-oz Cu.
CSD16411Q3 m0161-02_lps202.gif
Max RθJA = 160°C/W when mounted on minimum pad area of 2-oz Cu.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD16411Q3 D001_SLPS206.png
Figure 1. Transient Thermal Impedance
CSD16411Q3 D002_SLPS206A.gif
Figure 2. Saturation Characteristics
CSD16411Q3 D004_SLPS206A.gif
VDS = 12.5 V, ID = 10 A
Figure 4. Gate Charge
CSD16411Q3 D006_SLPS206A.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD16411Q3 D008_SLPS206.gif
ID = 10 A, VGS = 10 V
Figure 8. On Resistance vs Temperature
CSD16411Q3 D010_SLPS206.gif
Single pulse, max RθJC = 3.5°C/W
Figure 10. Maximum Safe Operating Area
CSD16411Q3 D012_SLPS206A.gif
Figure 12. Maximum Drain Current vs Temperature
CSD16411Q3 D003_SLPS206A.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD16411Q3 D005_SLPS206A.gif
Figure 5. Capacitance
CSD16411Q3 D007_SLPS206A.gif
Figure 7. On Resistance vs Gate Voltage
CSD16411Q3 D009_SLPS206A.gif
Figure 9. Typical Diode Forward Voltage
CSD16411Q3 D011_SLPS206.gif
Figure 11. Single Pulse Unclamped Inductive Switching