SLPS667 Data sheet

SLPS667B February 2017 – June 2024 CSD17318Q2

PRODUCTION DATA

Refer to the PDF data sheet for device specific package drawings

4.1 Electrical Characteristics

T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0V, I_D = 250μA	30			V
I_DSS	Drain-to-source leakage	V_GS = 0V, V_DS = 24V			1	μA
I_GSS	Gate-to-source leakage	V_DS = 0V, V_GS = 10V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250μA	0.6	0.9	1.2	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 2.5V, I_D = 8A		20	30	mΩ
		V_GS = 4.5V, I_D = 8A		13.9	16.9
		V_GS = 8V, I_D = 8A		12.6	15.1
g_fs	Transconductance	V_DS = 3V, I_D = 8A		42		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0V, V_DS = 15V, ƒ = 1MHz		676	879	pF
C_oss	Output capacitance			71	92	pF
C_rss	Reverse transfer capacitance			39	51	pF
R_G	Series gate resistance			1.0	2.0	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 15V, I_D = 8A		6.0		nC
Q_gd	Gate charge gate-to-drain			1.3		nC
Q_gs	Gate charge gate-to-source			1.5		nC
Q_g(th)	Gate charge at Vth			0.7		nC
Q_oss	Output charge	V_DS = 15V, V_GS = 0V		2.7		nC
t_d(on)	Turnon delay time	V_DS = 15V, V_GS = 4.5V, I_D = 8A, R_G = 2Ω		5		ns
t_r	Rise time			16		ns
t_d(off)	Turnoff delay time			13		ns
t_f	Fall time			4		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 8A, V_GS = 0V		0.8	1.0	V
Q_rr	Reverse recovery charge	V_DD= 15V, I_F = 8A, di/dt = 300A/μs		2.9		nC
t_rr	Reverse recovery time	V_DD= 15V, I_F = 8A, di/dt = 300A/μs		12		ns