SLPS550D May   2015  – February 2022 CSD17484F4

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJJ|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

GUID-522C8182-EF91-4A14-A0BB-09855B9C800E-low.gifFigure 3-1 Typical Part Dimensions
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 920 pC
Qgd Gate Charge Gate-to-Drain 75 pC
RDS(on) Drain-to-Source On-Resistance VGS = 1.8 V 170 mΩ
VGS = 2.5 V 125
VGS = 4.5 V 107
VGS = 8.0 V 99
VGS(th) Threshold Voltage 0.85 V
Device Information(1)
DEVICEQTYMEDIAPACKAGESHIP
CSD17484F430007-Inch ReelFemto (0402)
1.00-mm × 0.60-mm
Land Grid Array (LGA)		Tape and Reel
CSD17484F4T250
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°CVALUEUNIT
VDSDrain-to-Source Voltage30V
VGSGate-to-Source Voltage12V
IDContinuous Drain Current(1)3.0A
IDMPulsed Drain Current(1)(2)18A
IGContinuous Gate Clamp Current35mA
Pulsed Gate Clamp Current(2)350
PDPower Dissipation500mW
V(ESD)Human-Body Model (HBM)4kV
Charged-Device Model (CDM)2
TJ,
Tstg		Operating Junction,
Storage Temperature		–55 to 150°C
EASAvalanche Energy, Single Pulse ID = 7.1 A,
L = 0.1 mH, RG = 25 Ω		2.5mJ
(1) Typical RθJA = 85°C/W on 1-in2 (6.45-cm2), 2-oz
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
GUID-883CFFC5-74A0-4AEC-8034-8541B9812B80-low.gif Figure 3-2 Top View