SLPS550C May   2015  – December 2019 CSD17484F4

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJJ|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Description

This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Typical Part Dimensions
CSD17484F4 top_image_SLPS550.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 920 pC
Qgd Gate Charge Gate-to-Drain 75 pC
RDS(on) Drain-to-Source On-Resistance VGS = 1.8 V 170 mΩ
VGS = 2.5 V 125
VGS = 4.5 V 107
VGS = 8.0 V 99
VGS(th) Threshold Voltage 0.85 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD17484F4 3000 7-Inch Reel Femto (0402)
1.00-mm × 0.60-mm
Land Grid Array (LGA)
Tape and Reel
CSD17484F4T 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 12 V
ID Continuous Drain Current(1) 3.0 A
IDM Pulsed Drain Current(1)(2) 18 A
IG Continuous Gate Clamp Current 35 mA
Pulsed Gate Clamp Current(2) 350
PD Power Dissipation 500 mW
V(ESD) Human-Body Model (HBM) 4 kV
Charged-Device Model (CDM) 2
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 150 °C
EAS Avalanche Energy, Single Pulse ID = 7.1 A,
L = 0.1 mH, RG = 25 Ω
2.5 mJ
  1. Typical RθJA = 85°C/W on 1-in2 (6.45-cm2), 2-oz
    (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
  2. Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
Top View
CSD17484F4 Top_View_6.gif