SLPS367B August   2012  – July 2014 CSD18502KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • TO-220 Plastic Package

2 Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 2.4 mΩ, 40 V, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

TO220p2.png
FET_Pins.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 40 V
Qg Gate Charge Total (10V) 52 nC
Qgd Gate Charge Gate-to-Drain 8.4 nC
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 3.3
VGS = 10 V 2.4
VGS(th) Threshold Voltage 1.8 V

Ordering Information(1)

Device Package Media Qty Ship
CSD18502KCS TO-220 Plastic Package Tube 50 Tube
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 40 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 100 A
Continuous Drain Current (Silicon limited), TC = 25°C 212
Continuous Drain Current (Silicon limited), TC = 100°C 150
IDM Pulsed Drain Current (1) 400 A
PD Power Dissipation 259 W
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 175 °C
EAS Avalanche Energy, single pulse
ID = 81 A, L = 0.1 mH, RG = 25 Ω
330 mJ
  1. Max RθJC = 0.6ºC/W, pulse duration ≤100 μs, duty cycle
    ≤1%

RDS(on) vs VGS

graph07p2_SLPS367.png

Gate Charge

graph04p2_SLPS367.png