SLPS367B August   2012  – July 2014 CSD18502KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Revision History

Changes from A Revision (October 2012) to B Revision

  • Increased the TC = 25º continuous drain current to 212 A Go
  • Increased the TC = 125º continuous drain current to 150 A Go
  • Increased the pulsed drain current to 400 A Go
  • Increased the max power dissipation to 259 WGo
  • Increased the max operating junction and storage temperature to 175ºGo
  • Updated the pulsed current conditions Go
  • Updated Figure 1 from a normalized RθJA to an RθJC curveGo
  • Updated Figure 6 to extend to 175°C Go
  • Updated Figure 8 to extend to 175°C Go
  • Updated the SOA in Figure 10Go
  • Updated Figure 12 to extend to 175°C Go

Changes from * Revision (August 2012) to A Revision

  • Changed the Transconductance TYP value From: 149 S To: 138 SGo
  • Changed RθJA From: 65°C/W To: 62°C/WGo