SLPS361B August   2012  – July 2014 CSD18532KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical Data
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4 Revision History

Changes from A Revision (October 2012) to B Revision

  • Increased ID at TC = 100°C to 116 AGo
  • Increased IDM to 400 A Go
  • Increased max operating junction and storage temperature to 175°C Go
  • Updated Figure 1 from a normalized RθJA to an RθJC curveGo
  • Updated Figure 6 to extend to 175°C Go
  • Updated Figure 8 to extend to 175°C Go
  • Updated the SOA in Figure 10Go
  • Updated Figure 12 to extend to 175°C Go

Changes from * Revision (August 2012) to A Revision

  • Changed the Transconductance TYP value From: 146 S To: 187 SGo
  • Changed RθJA From: MAX = 62°C/W To: MAX = 65°C/WGo
  • Changed Figure 2Go