SLPS361B August   2012  – July 2014 CSD18532KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical Data
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.5 1.8 2.2 V
RDS(on) Drain-to-Source On Resistance VGS = 4.5 V, ID = 100 A 4.2 5.3 mΩ
VGS = 10 V, ID = 100 A 3.3 4.2 mΩ
gƒs Transconductance VDS = 30 V, ID = 100 A 187 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 3900 4680 pF
Coss Output Capacitance 470 564 pF
Crss Reverse Transfer Capacitance 11 14 pF
RG Series Gate Resistance 1.3 2.6 Ω
Qg Gate Charge Total (4.5 V) VDS = 30 V, ID = 100 A 21 25 nC
Qg Gate Charge Total (10 V) 44 53 nC
Qgd Gate Charge Gate-to-Drain 6.9 nC
Qgs Gate Charge Gate-to-Source 10 nC
Qg(th) Gate Charge at Vth 7.3 nC
Qoss Output Charge VDS = 30 V, VGS = 0 V 52 nC
td(on) Turn On Delay Time VDS = 30 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω		 7.8 ns
tr Rise Time 5.3 ns
td(off) Turn Off Delay Time 24.2 ns
tƒ Fall Time 5.6 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 100 A, VGS = 0 V 0.8 1 V
Qrr Reverse Recovery Charge VDS= 30 V, IF = 100 A,
di/dt = 300 A/μs		 127 nC
trr Reverse Recovery Time 57 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance 0.6 °C/W
RθJA Junction-to-Ambient Thermal Resistance 62

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
graph01_SLPS361B.png
Figure 1. Transient Thermal Impedance
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Figure 2. Saturation Characteristics
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Figure 3. Transfer Characteristics
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Figure 4. Gate Charge
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Figure 6. Threshold Voltage vs Temperature
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Figure 8. Normalized On-State Resistance vs Temperature
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Figure 10. Maximum Safe Operating Area
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Figure 12. Maximum Drain Current vs Temperature
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Figure 5. Capacitance
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Figure 7. On-State Resistance vs Gate-to-Source Voltage
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Figure 9. Typical Diode Forward Voltage
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Figure 11. Single Pulse Unclamped Inductive Switching