SLPS440C June   2013  – February 2018 CSD18532NQ5B

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Device Images
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5B Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q5B Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DNK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Electrical Characteristics

TA = 25°C unless otherwise stated
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 2.4 2.8 3.4 V
RDS(on) Drain-to-source on-resistance VGS = 6 V, ID = 25 A 3.5 4.4 mΩ
VGS = 10 V, ID = 25 A 2.7 3.4
gfs Transconductance VDS = 30 V, ID = 25 A 140 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 4100 5340 pF
Coss Output capacitance 495 644 pF
Crss Reverse transfer capacitance 16 21 pF
RG Series gate resistance 1.2 2.4 Ω
Qg Gate charge total (10 V) VDS = 30 V, ID = 25 A 49 64 nC
Qgd Gate charge gate-to-drain 7.9 nC
Qgs Gate charge gate-to-source 16 nC
Qg(th) Gate charge at Vth 11 nC
Qoss Output charge VDS = 30 V, VGS = 0 V 69 nC
td(on) Turnon delay time VDS = 30 V, VGS = 10 V,
IDS = 25 A, RG = 0 Ω		 8.2 ns
tr Rise time 8.7 ns
td(off) Turnoff delay time 20 ns
tf Fall time 2.7 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 25 A, VGS = 0 V 0.8 1 V
Qrr Reverse recovery charge VDS = 30 V, IF = 25 A,
di/dt = 300 A/μs		 139 nC
trr Reverse recovery time 64 ns