SLPS388B September   2012  – January 2015 CSD18533Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQJ|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
¨STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 60 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 48 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 1.5 1.9 2.3 V
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V, ID = 18 A 6.5 8.5 mΩ
VGS = 10 V, ID = 18 A 4.7 5.9 mΩ
gƒs Transconductance VDS = 30 V, ID = 18 A 122 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 30 V, ƒ = 1 MHz 2200 2750 pF
Coss Output Capacitance 292 365 pF
Crss Reverse Transfer Capacitance 7 9 pF
RG Series Gate Resistance 1.3 2.6 Ω
Qg Gate Charge Total (4.5 V) VDS = 30 V, ID = 18 A 14 18 nC
Qg Gate Charge Total (10 V) 29 36
Qgd Gate Charge Gate-to-Drain 5.4 nC
Qgs Gate Charge Gate-to-Source 6.6 nC
Qg(th) Gate Charge at Vth 4.7 nC
Qoss Output Charge VDS = 30 V, VGS = 0 V 31 nC
td(on) Turn On Delay Time VDS = 30 V, VGS = 10 V, IDS = 18 A, RG = 0 Ω 5.2 ns
tr Rise Time 5.5 ns
td(off) Turn Off Delay Time 15 ns
tƒ Fall Time 2.0 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 18 A, VGS = 0 V 0.8 1 V
Qrr Reverse Recovery Charge VDS= 30 V, IF = 18 A, di/dt = 300 A/μs 68 nC
trr Reverse Recovery Time 40 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Thermal Resistance Junction to Case(1) 1.3 °C/W
RθJA Thermal Resistance Junction to Ambient(1)(2) 50
(1) RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
M0137-01_LPS198.gif
 Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of
2 oz. (0.071 mm thick) Cu.
M0137-02_LPS198.gif
 Max RθJA = 125°C/W when mounted on a minimum pad area of
2 oz. (0.071 mm thick) Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
graph01_SLPS444B.png
Figure 1. Transient Thermal Impedance
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Figure 2. Saturation Characteristics
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Figure 4. Gate Charge
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Figure 6. Threshold Voltage vs Temperature
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Figure 8. Normalized On-State Resistance vs Temperature
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Figure 10. Maximum Safe Operating Area
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Figure 12. Maximum Drain Current vs Temperature
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Figure 3. Transfer Characteristics
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Figure 5. Capacitance
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Figure 7. On-State Resistance vs Gate-to-Source Voltage
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Figure 9. Typical Diode Forward Voltage
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Figure 11. Single Pulse Unclamped Inductive Switching