SLPS571A May   2016  – August 2017 CSD18541F5

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Mechanical Data (Package|Pins)
  • YJK|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Features

  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • Ultra-Small Footprint
    • 1.53 mm × 0.77 mm
  • Low Profile
    • 0.35-mm Height
  • Integrated ESD Protection Diode
    • Lead and Halogen Free
    • RoHS Compliant

    Applications

    • Optimized for Industrial Load Switch Applications
    • Optimized for General Purpose Switching Applications

    Description

    This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

    Product Summary

    TA = 25°C TYPICAL VALUE UNIT
    VDS Drain-to-Source Voltage 60 V
    Qg Gate Charge Total (10 V) 11 nC
    Qgd Gate Charge Gate-to-Drain 1.6 nC
    RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 57
    VGS = 10 V 54
    VGS(th) Threshold Voltage 1.75 V

    Device Information(1)

    DEVICE QTY MEDIA PACKAGE SHIP
    CSD18541F5 3000 7-Inch Reel Femto
    1.53-mm × 0.77-mm
    SMD Lead Less
    Tape
    and
    Reel
    CSD18541F5T 250
    1. For all available packages, see the orderable addendum at the end of the data sheet.

    Absolute Maximum Ratings

    TA = 25°C VALUE UNIT
    VDS Drain-to-Source Voltage 60 V
    VGS Gate-to-Source Voltage ±20 V
    ID Continuous Drain Current(1) 2.2 A
    IDM Pulsed Drain Current(1)(2) 21 A
    PD Power Dissipation 500 mW
    TJ,
    Tstg
    Operating Junction Temperature,
    Storage Temperature
    –55 to 150 °C
    EAS Avalanche Energy, Single Pulse
    ID = 12.8 A, L = 0.1 mH, RG = 25 Ω
    8.2 mJ
    1. Typical RθJA = 245°C/W.
    2. Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

    Typical Part Dimensions

    CSD18541F5 Front_Page_Image_slps571.gif

    Top View

    CSD18541F5 Top_View_SLPS571.gif